N-Channel Power MOSFETs, 3.5A, 150-200V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

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FAIRCHILD

仙童半導體

N-Channel Power MOSFETs, 3.5A, 150-200V

ONSEMI

安森美半導體

POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE

文件：191.08 Kbytes 頁數：6 Pages

MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：345.42 Kbytes 頁數：2 Pages

ISC

無錫固電

N-Channel Enhancement Mode Power MOSFET

文件：349.31 Kbytes 頁數：10 Pages

CYSTEKEC

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