絲印：MPSA44；Package：SOT-89；NPN Silicon Epitaxial Planar Transistor

Features ● For high voltage switching and amplifier applications

文件：652.88 Kbytes 頁(yè)數(shù)：4 Pages

PJSEMI

平晶半導(dǎo)體

絲?。?strong>MPSA44；Package：SOT-89；NPN Silicon Epitaxial Planar Transistor

Features ● For high voltage switching and amplifier applications

文件：652.88 Kbytes 頁(yè)數(shù)：4 Pages

PJSEMI

平晶半導(dǎo)體

絲印：A44Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage

文件：1.40561 Mbytes 頁(yè)數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：A44Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage

文件：1.40561 Mbytes 頁(yè)數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/a44/marking.html">A44；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage

文件：810.79 Kbytes 頁(yè)數(shù)：3 Pages

GWSEMI

唯圣電子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage

文件：176.04 Kbytes 頁(yè)數(shù)：3 Pages

FS

Power Dissipation Pcm= 625 mW (Ta=25C)

Feature * Power Dissipation Pcm= 625 mW (Ta=25°C) * Collector Current Icm=0.2A * Collector-base Voltage Vbr (cbo)= 400V * Operating and Storage Junction Temperature Range Tj. Tstg: -55°C ~ +150°C * Marking A44

文件：185.8 Kbytes 頁(yè)數(shù)：2 Pages

FCI

富加宜

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage

文件：183.88 Kbytes 頁(yè)數(shù)：4 Pages

JIANGSU

長(zhǎng)電科技

NPN high-voltage transistor

DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. FEATURES ? Low current (max. 300 mA) ? High voltage (max. 400 V). APPLICATIONS ? Telecommunication applications.

文件：42.27 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES ? High Breakdown Voltage. ? Collector Power Dissipation : PC=625mW.

文件：78.72 Kbytes 頁(yè)數(shù)：3 Pages

KEC

KEC(Korea Electronics)