NPN Darlington Transistor

NPN Darlington Transistor ? This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. ? Sourced from process 05.

文件：605.7 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導(dǎo)體

DARLINGTON TRANSISTOR

DESCRIPTION The UTC MPSA13is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES= 30V

文件：92.96 Kbytes 頁數(shù)：3 Pages

UTC

友順

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DARLINGTON TRANSISTOR)

GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR.

文件：62.59 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS

NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS

文件：298.52 Kbytes 頁數(shù)：3 Pages

CDIL

SILICON NPN DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA12 series devices are silicon NPN Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

文件：665.79 Kbytes 頁數(shù)：3 Pages

CENTRAL

NPN Silicon Darlington Transistor

Features ? Halogen Free Available Upon Request By Adding Suffix -HF ? Moisture Sensitivity Level 1 ? Epoxy Meets UL 94 V-0 Flammability Rating ? Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified

文件：433.2 Kbytes 頁數(shù)：4 Pages

MCC

Darlington Transistors

Darlington Transistors NPN Silicon

文件：225.91 Kbytes 頁數(shù)：6 Pages

MOTOROLA

摩托羅拉

Plastic-Encapsulate Transistros NPN Darlington Transistor

Plastic-Encapsulate Transistros NPN Darlington Transistor P/b Lead(Pb)-Free

文件：500.04 Kbytes 頁數(shù)：4 Pages

WEITRON

TO-92 Plastic-Encapsulate Transistors

文件：590.38 Kbytes 頁數(shù)：1 Pages

DAYA

大亞電器

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designed for applications requiring extremely high current gain.

文件：213.14 Kbytes 頁數(shù)：1 Pages

DCCOM

道全