絲?。?strong>MMQ；Package：SMBJ；Transient Voltage Suppressor Diode Series

文件：342.75 Kbytes 頁數(shù)：5 Pages

BOURNS

伯恩斯

絲印：60R044RF；Package：TO-247；600V 0.044? N-channel MOSFET

? Description MMQ60R044RF is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It has low gate charge and ultra-fast body diode, so turn off action is improved. MMQ60R044RF provides excellent performances, such as efficien

文件：696.29 Kbytes 頁數(shù)：10 Pages

MGCHIP

絲印：60R078RF；600V 0.078? N-channel MOSFET

? Description MMQ60R078RF is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It has low gate charge and ultra-fast body diode, so turn off action is improved. MMQ60R078RF provides excellent performances, such as efficien

文件：746.53 Kbytes 頁數(shù)：10 Pages

MGCHIP

600V 0.044? N-channel MOSFET

? Description MMQ60R044RF is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It has low gate charge and ultra-fast body diode, so turn off action is improved. MMQ60R044RF provides excellent performances, such as efficien

文件：696.29 Kbytes 頁數(shù)：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：373.29 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

600V 0.078? N-channel MOSFET

? Description MMQ60R078RF is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It has low gate charge and ultra-fast body diode, so turn off action is improved. MMQ60R078RF provides excellent performances, such as efficien

文件：746.53 Kbytes 頁數(shù)：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.115Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：372.61 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.115Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：372.61 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：373.44 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SC-59 QUAD TRANSIENT VOLTAGE SUPPRESSOR 5.6 VOLTS

SC-59 Quad Monolithic Common Anode Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers,

文件：136.79 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉