| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MMBT2907 | PNP General Purpose Amplifier PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. 文件:42.16 Kbytes 頁數(shù):2 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
MMBT2907 | PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. 文件:315.66 Kbytes 頁數(shù):8 Pages | ONSEMI 安森美半導體 | ONSEMI | |
MMBT2907 | PNP (GENERAL PURPOSE TRANSISTOR) PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR 文件:69.97 Kbytes 頁數(shù):2 Pages | SAMSUNG 三星 | SAMSUNG | |
MMBT2907 | Surface mount Si-Epitaxial PlanarTransistors ? Power dissipation 250 mW ? Plastic case SOT-23 ? Weight approx. 0.01 g ? Plastic material has UL classification 94V-0 ? Standard packaging taped and reeled 文件:59.3 Kbytes 頁數(shù):2 Pages | DIOTEC 德歐泰克 | DIOTEC | |
MMBT2907 | PNP General Purpose Transistors PNP General Purpose Transistors 文件:159.19 Kbytes 頁數(shù):6 Pages | WEITRON | WEITRON | |
MMBT2907 | 絲?。?a target="_blank" title="Marking" href="/m2b/marking.html">M2B;Package:SOT-23;PNP General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ideal for medium power amplification and switching. APPLICATIONS ● This device is designed as a general purpose amplifier and switching. 文件:275.79 Kbytes 頁數(shù):4 Pages | BILIN 銀河微電 | BILIN | |
MMBT2907 | General Purpose Transistor (PNP) Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching 文件:139.45 Kbytes 頁數(shù):5 Pages | COMCHIP 典琦 | COMCHIP | |
MMBT2907 | PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended. 文件:130.09 Kbytes 頁數(shù):2 Pages | SEMTECH_ELEC 先之科半導體 | SEMTECH_ELEC | |
MMBT2907 | 絲印:M2B;Package:SOT-23;TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222) 文件:723.75 Kbytes 頁數(shù):4 Pages | SY 順燁電子 | SY | |
MMBT2907 | 絲印:M2B;Package:SOT-23;SOT-23 Plastic-Encapsulate Transistors FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222) 文件:1.51274 Mbytes 頁數(shù):4 Pages | DGNJDZ 南晶電子 | DGNJDZ |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
- 性質(zhì):
射頻/高頻放大 (HF)_通用 (G)
- 封裝形式:
- 極限工作電壓:
60V
- 最大電流允許值:
0.6A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
- 可代換的型號:
3CG120C,
- 最大耗散功率:
0.35W
- 放大倍數(shù):
- 圖片代號:
NO
- vtest:
60
- htest:
999900
- atest:
0.6
- wtest:
0.35
產(chǎn)品屬性
- 產(chǎn)品編號:
MMBT2907
- 制造商:
onsemi
- 類別:
分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個
- 包裝:
管件
- 晶體管類型:
PNP
- 不同?Ib、Ic 時?Vce 飽和壓降(最大值):
1.6V @ 50mA,500mA
- 電流 - 集電極截止(最大值):
20nA(ICBO)
- 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):
100 @ 150mA,10V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-236-3,SC-59,SOT-23-3
- 供應(yīng)商器件封裝:
SOT-23-3
- 描述:
TRANS PNP 40V 0.8A SOT23-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BORN(伯恩半導體) |
24+ |
SOT-23 |
50000 |
品牌代理,價格優(yōu)勢,技術(shù)支持!! |
詢價 | ||
CJ |
25+ |
SOT23 |
6500 |
十七年專營原裝現(xiàn)貨一手貨源,樣品免費送 |
詢價 | ||
onsemi |
25+ |
SOT-23-3 |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
摩托羅拉 |
24+ |
SOT-23 |
5000 |
公司存貨 |
詢價 | ||
ON |
1215+ |
SOT23 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價 | ||
FSC |
06+ |
原廠原裝 |
3051 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
ON |
23+ |
SOT-23 |
5500 |
現(xiàn)貨,全新原裝 |
詢價 | ||
ON |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
FAIRCHILD |
24+ |
SOT-23 |
2460 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
DK |
25+ |
SOT-23 |
5000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |
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