絲印：6Z；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

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FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件：1.40939 Mbytes 頁數(shù)：16 Pages

ONSEMI

安森美半導(dǎo)體

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

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UTC

友順

絲印：C6Z；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for Hi

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DIODES

美臺半導(dǎo)體

N-Channel Enhancement Mode MOSFET

Features ● Surface-mounted package ● Advanced trench cell design ● Extremely low threshold voltage ● ESD protected ( HBM > 2KV ) Quick reference ● BV ≧ 60 V ● Ptot ≦ 0.83 W ● ID ≦ 0.5 A ● RDS(ON) ≦ 3 Ω @ VGS = 10 V ● RDS(ON) ≦ 4 Ω @ VGS = 4.5 V

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SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

絲?。?a target="_blank" title="Marking" href="/6z/marking.html">6Z；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

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FAIRCHILD

仙童半導(dǎo)體

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

The UTC MMBF170 is an N-channel enhancement MOSFETusing UTC’s advanced technology to provide the customers withperfect RDS(ON), low input capacitance, low gate threshold voltageand high switching speed. ? RDS(ON)<5mΩ @ VGS=10V,ID=0.2A\n? High Switching Speed\n? Low Input Capacitance(typical 22pF);

UTC

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N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

美臺半導(dǎo)體

MOS場效應(yīng)

JSMICRO

杰盛微

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

文件：140.38 Kbytes 頁數(shù)：2 Pages

UTC

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