SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：53.32 Kbytes 頁數(shù)：4 Pages

WTE

Won-Top Electronics

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes Features Very low capacitance—Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications ?Designed primarily for UHF mixer applications. ? ? ?

文件：237.46 Kbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子

Dual Hot Carrier Mixer Diodes

文件：229.52 Kbytes 頁數(shù)：3 Pages

DSK

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件：133.89 Kbytes 頁數(shù)：3 Pages

PANJIT

強茂

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件：84.98 Kbytes 頁數(shù)：3 Pages

PANJIT

強茂

- A,7V,Surface Mount Small Signal Schottky Diodes

Galaxy

銀河微電

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. ? Very Low Capacitance — Less Than 1.0 pF @ Zero Volts ? Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA

文件：45.93 Kbytes 頁數(shù)：2 Pages

LRC

樂山無線電

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. ? Very Low Capacitance — Less Than 1.0 pF @ Zero Volts ? Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA

文件：60.78 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra?fast switching circuits. Features ?Very Low Capacitance ?Less Than 1.0 pF @ Zero V ?Low Forward Voltage ?0.5 V (Typ) @ IF= 10 mA ?P

文件：41.41 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra?fast switching circuits. Features ?Very Low Capacitance ?Less Than 1.0 pF @ Zero V ?Low Forward Voltage ?0.5 V (Typ) @ IF= 10 mA ?P

文件：127.59 Kbytes 頁數(shù)：3 Pages

ONSEMI

安森美半導(dǎo)體