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    首頁 >絲印反查>MJD44H11

    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

    MJD44H11

    絲印:MJD44H11;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

    1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Ele

    文件:241.83 Kbytes 頁數(shù):12 Pages

    NEXPERIA

    安世

    MJD44H11A

    絲?。?a target="_blank" title="Marking" href="/mjd44h11a/marking.html">MJD44H11A;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

    1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? El

    文件:242.13 Kbytes 頁數(shù):12 Pages

    NEXPERIA

    安世

    MJD44H11

    絲印:MJD44H11;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

    1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Ele

    文件:241.83 Kbytes 頁數(shù):12 Pages

    NEXPERIA

    安世

    MJD44H11A

    絲印:MJD44H11A;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

    1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? El

    文件:242.13 Kbytes 頁數(shù):12 Pages

    NEXPERIA

    安世

    MJD44H11

    Complementary Power Transistors

    Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“

    文件:310.51 Kbytes 頁數(shù):11 Pages

    ONSEMI

    安森美半導(dǎo)體

    MJD44H11

    SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

    Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. ? Lead Formed for Surface Mount Application in Plastic S

    文件:192.88 Kbytes 頁數(shù):6 Pages

    MOTOROLA

    摩托羅拉

    MJD44H11

    Gate Driver

    Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an

    文件:263.67 Kbytes 頁數(shù):7 Pages

    POWEREX

    MJD44H11

    isc Silicon NPN Power Transistors

    DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl

    文件:342.76 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    MJD44H11

    Complementary Power Transistors

    Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packages are Available

    文件:46.83 Kbytes 頁數(shù):2 Pages

    KEXIN

    科信電子

    MJD44H11

    COMPLEMENTARY SILICON PNP TRANSISTORS

    MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

    文件:64.379 Kbytes 頁數(shù):5 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    晶體管資料

    • 型號(hào):

      MJD44H11

    • 別名:

      三極管、晶體管、晶體三極管

    • 生產(chǎn)廠家:

    • 制作材料:

    • 性質(zhì):

      低頻或音頻放大 (LF)_功率放大 (PA)

    • 封裝形式:

      貼片封裝

    • 極限工作電壓:

    • 最大電流允許值:

      8A

    • 最大工作頻率:

      <1MHZ或未知

    • 引腳數(shù):

      3

    • 可代換的型號(hào):

    • 最大耗散功率:

      20W

    • 放大倍數(shù):

    • 圖片代號(hào):

      G-217

    • vtest:

      0

    • htest:

      999900

    • atest:

      8

    • wtest:

      20

    詳細(xì)參數(shù)

    • 型號(hào):

      MJD44H11

    • 功能描述:

      兩極晶體管 - BJT 8A 80V 20W NPN

    • RoHS:

    • 制造商:

      STMicroelectronics

    • 晶體管極性:

      PNP 集電極—基極電壓

    • VCBO:

      集電極—發(fā)射極最大電壓

    • VCEO:

      - 40 V 發(fā)射極 - 基極電壓

    • VEBO:

      - 6 V

    • 增益帶寬產(chǎn)品fT:

      直流集電極/Base Gain hfe

    • Min:

      100 A

    • 安裝風(fēng)格:

      SMD/SMT

    • 封裝/箱體:

      PowerFLAT 2 x 2

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
    Nexperia(安世)
    24+
    TO-252
    1259
    原廠訂貨渠道,支持BOM配單一站式服務(wù)
    詢價(jià)
    NEXPERIA/安世
    25+
    DPAK-3
    600000
    NEXPERIA/安世全新特價(jià)MJD44H11即刻詢購立享優(yōu)惠#長(zhǎng)期有排單訂
    詢價(jià)
    on
    23+
    TO252/DPAK
    3500
    原廠原裝正品
    詢價(jià)
    Nexperia
    24+
    TO-252
    27500
    原裝現(xiàn)貨,有上庫存就有貨,假一賠十
    詢價(jià)
    ON(安森美)
    23+
    9281
    公司只做原裝正品,假一賠十
    詢價(jià)
    ON
    2024+
    N/A
    70000
    柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
    詢價(jià)
    ON/安森美
    24+
    SOT-252
    10000
    只有原裝
    詢價(jià)
    on
    2450+
    TO252/DPAK
    9850
    只做原裝正品現(xiàn)貨或訂貨假一賠十!
    詢價(jià)
    ON(安森美)
    25+
    N/A
    21000
    原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開票。
    詢價(jià)
    ON
    25+
    TO-251
    18000
    原廠直接發(fā)貨進(jìn)口原裝
    詢價(jià)
    更多MJD44H11供應(yīng)商 更新時(shí)間2026-1-22 14:49:00

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