| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Elect 文件：121.38 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications 文件：297.24 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications 文件：278.21 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Elect 文件：121.38 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
100 V, 6 A PNP high power bipolar transistor Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popular MJD42 series ? Low collector emitter saturation voltage ? Fast switching speeds Applications ? Power management ? Load switch ? Linear 文件：230.14 Kbytes 頁數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/mjd42ca/marking.html">MJD42CA；Package：DPAK；100 V, 6 A PNP high power bipolar transistor Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popular MJD42 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to AEC-Q101 and recommended for use i 文件：223.58 Kbytes 頁數(shù)：10 Pages | NEXPERIA 安世 | NEXPERIA | ||
100 V, 6 A PNP high power bipolar transistor Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popular MJD42 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to AEC-Q101 and recommended for use i 文件：223.58 Kbytes 頁數(shù)：10 Pages | NEXPERIA 安世 | NEXPERIA | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Elect 文件：121.38 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Elect 文件：121.38 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
General Purpose Amplifier General Purpose Amplifier Low Speed Switching Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK, “- I” Suffix) ? Electrically Similar to Popular TIP42C 文件：47.59 Kbytes 頁數(shù)：5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （PA）
- 封裝形式：
貼片封裝
- 極限工作電壓：
- 最大電流允許值：
6A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
20W
- 放大倍數(shù)：
- 圖片代號：
G-217
- vtest：
0
- htest：
999900
- atest：
6
- wtest：
20
產(chǎn)品屬性
- 產(chǎn)品編號：
MJD42C
- 制造商：
onsemi
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個
- 包裝：
托盤
- 晶體管類型：
PNP
- 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：
1.5V @ 600mA，6A
- 電流 - 集電極截止（最大值）：
50μA
- 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：
15 @ 3A，4V
- 頻率 - 躍遷：
3MHz
- 工作溫度：
-65°C ~ 150°C（TJ）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
TO-252-3，DPak（2 引線 + 接片），SC-63
- 供應(yīng)商器件封裝：
DPAK
- 描述：
TRANS PNP 100V 6A DPAK
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
原裝 |
25+ |
TO-252 |
20300 |
原裝特價MJD42C即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
CJ |
20+ |
TO-252 |
30000 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
CJ/長電 |
2021+ |
TO-252 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
CJ長晶 |
24+ |
TO-252 |
12000 |
進口原裝 價格優(yōu)勢 |
詢價 | ||
onsemi |
25+ |
DPAK |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
長電 |
24+ |
TO-252 |
383 |
詢價 | |||
ON |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
MOTOROLA |
25+ |
TO-252 |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
長電 |
24+ |
TO-252 |
65300 |
一級代理/放心購買! |
詢價 | ||
BLUE ROCKET(藍箭) |
2447 |
TO-252 |
105000 |
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 |
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