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          首頁 >MJD42>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MJD42C

          isc Silicon PNP Power Transistors

          DESCRIPTION ? DC Current Gain -hFE = 30(Min)@ IC= -0.3A ? Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ? Complement to Type MJD41C ? DPAK for Surface Mount Applications ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

          文件:183.39 Kbytes 頁數:3 Pages

          ISC

          無錫固電

          MJD42C

          Complementary Silicon Power Ttransistors

          DESCRIPTION It is intented for use in power amplifier and switching applications.

          文件:368.42 Kbytes 頁數:1 Pages

          TGS

          MJD42C

          絲?。?a target="_blank" title="Marking" href="/mjd42cxxxx/marking.html">MJD42CXXXX;Package:TO-252-2L;TO-252-2L Plastic-Encapsulate Transistors

          FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simila

          文件:2.47687 Mbytes 頁數:5 Pages

          DGNJDZ

          南晶電子

          MJD42C

          Silicon PNP transistor in a TO-252 Plastic Package.

          Descriptiona Silicon PNP transistor in a TO-252 Plastic Package. Features Complement to MJD41C. Applications Medium power linear switching applications.

          文件:828.26 Kbytes 頁數:6 Pages

          FOSHAN

          藍箭電子

          MJD42C

          絲?。?a target="_blank" title="Marking" href="/mjd42c/marking.html">MJD42C;Package:DPAK;100 V, 6 A PNP high power bipolar transistor

          Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popular MJD42 series ? Low collector emitter saturation voltage ? Fast switching speeds Applications ? Power management ? Load switch ? Linear

          文件:230.14 Kbytes 頁數:11 Pages

          NEXPERIA

          安世

          MJD42C

          TRANSISTOR (PNP)

          TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications.

          文件:534.27 Kbytes 頁數:5 Pages

          FS

          MJD42C1G

          Complementary Power Transistors

          Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Elect

          文件:121.38 Kbytes 頁數:7 Pages

          ONSEMI

          安森美半導體

          MJD42C-251

          Silicon PNP Power Transistor

          DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

          文件:297.24 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          MJD42C-252

          Silicon PNP Power Transistor

          DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

          文件:278.21 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          MJD42CG

          Complementary Power Transistors

          Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Elect

          文件:121.38 Kbytes 頁數:7 Pages

          ONSEMI

          安森美半導體

          晶體管資料

          • 型號:

            MJD42C

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產廠家:

          • 制作材料:

          • 性質:

            低頻或音頻放大 (LF)_功率放大 (PA)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

          • 最大電流允許值:

            6A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數:

            3

          • 可代換的型號:

          • 最大耗散功率:

            20W

          • 放大倍數:

          • 圖片代號:

            G-217

          • vtest:

            0

          • htest:

            999900

          • atest:

            6

          • wtest:

            20

          技術參數

          • Package name:

            DPAK

          • Size (mm):

            6.1 x 6.6 x 2.3

          • Polarity:

            PNP

          • Ptot (mW):

            15000

          • VCEO [max] (V):

            -100

          • IC [max] (mA):

            -6000

          • hFE [min]:

            30

          • Tj [max] (°C):

            150

          • fT [min] (MHz):

            3

          • Automotive qualified:

            N

          供應商型號品牌批號封裝庫存備注價格
          ST
          22+
          TO-252
          6000
          十年配單,只做原裝
          詢價
          ON/安森美
          23+
          TO-252
          13000
          原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          ON/安森美
          23+
          TO-252
          18656
          詢價
          ST/意法
          22+
          TO-252
          98553
          詢價
          ST
          25+
          TO-252
          12300
          獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
          詢價
          ON/安森美
          24+
          TO-252
          60000
          詢價
          MOT
          24+
          SMD
          5000
          公司存貨
          詢價
          ON
          24+/25+
          2445
          原裝正品現貨庫存價優(yōu)
          詢價
          ON
          23+
          TO-252
          3200
          絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
          詢價
          ON
          17+
          TO-252
          6200
          100%原裝正品現貨
          詢價
          更多MJD42供應商 更新時間2026-1-18 14:02:00
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