| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MJD32C | 絲?。?strong>MJD32C；Package：DPAK；100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elect 文件：230.35 Kbytes 頁(yè)數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | |
絲?。?strong>MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes 頁(yè)數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
絲?。?strong>MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes 頁(yè)數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/mjd32ca/marking.html">MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elec 文件：230.55 Kbytes 頁(yè)數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/mjd32cu/marking.html">MJD32CU；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > -100V ? IC = -3A High Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Comp 文件：384.05 Kbytes 頁(yè)數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
MJD32C | 絲?。?strong>MJD32C；Package：DPAK；100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elect 文件：230.35 Kbytes 頁(yè)數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | |
絲印：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes 頁(yè)數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
絲?。?strong>MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes 頁(yè)數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/mjd32ca/marking.html">MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elec 文件：230.55 Kbytes 頁(yè)數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/mjd32cu/marking.html">MJD32CU；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > -100V ? IC = -3A High Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Comp 文件：384.05 Kbytes 頁(yè)數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （PA）
- 封裝形式：
貼片封裝
- 極限工作電壓：
- 最大電流允許值：
3A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
- 最大耗散功率：
15W
- 放大倍數(shù)：
- 圖片代號(hào)：
G-217
- vtest：
0
- htest：
999900
- atest：
3
- wtest：
15
詳細(xì)參數(shù)
- 型號(hào)：
MJD32C
- 功能描述：
兩極晶體管 - BJT 3A 100V 15W PNP
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
PNP 集電極—基極電壓
- VCBO：
集電極—發(fā)射極最大電壓
- VCEO：
- 40 V 發(fā)射極 - 基極電壓
- VEBO：
- 6 V
- 增益帶寬產(chǎn)品fT：
直流集電極/Base Gain hfe
- Min：
100 A
- 安裝風(fēng)格：
SMD/SMT
- 封裝/箱體：
PowerFLAT 2 x 2
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025 |
TO-252 |
3200 |
國(guó)產(chǎn)南科 |
詢價(jià) | ||
CJ/長(zhǎng)電 |
25+ |
TO-252 |
32000 |
CJ/長(zhǎng)電全新特價(jià)MJD32C即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
ON |
24+ |
TO-252 |
8700 |
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)! |
詢價(jià) | ||
CJ |
23+ |
TO252 |
12500 |
原廠原裝正品 |
詢價(jià) | ||
ON(安森美) |
25+ |
貼片三極管 MJD32C |
7987000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
CJ/長(zhǎng)晶 |
24+ |
TO-252 |
45000 |
只做全新原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
CJ |
2450+ |
TO252 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
Nexperia |
25+ |
TO-252 |
21000 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
ON/ONSemiconductor/安森 |
24+ |
TO-263 |
7434 |
新進(jìn)庫(kù)存/原裝 |
詢價(jià) | ||
MOT |
99+ |
SOT252/2.5 |
4300 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) |
相關(guān)芯片絲印
更多- MJD32CA
- MJD350-13
- MJD41C-Q
- MJD42C
- MJD42C
- MJD44H11A
- MJD45H11A
- MJE170
- MJE171-TU
- MJE172-TU
- MJE2955
- LM4041DIDCKR
- LM4041DIDCKR
- LM4041DIDCKRG4
- KTD2151BEUO-GG-TR
- BD5229FVE
- SMBJ30A
- NCV8163AMX330TBG
- BD52E33G
- BD49L43G-TR
- S2FL30CA
- 74LVC1G34FX4-7
- BD5229FVE-TR
- BD49L43G-TR
- BD5229FVE
- PZU33BA
- NCV8164ASN280T1G
- BD5229FVE-TR
- BD5229FVE-TR
- BD5229G-TR
- BD49L43G-TR
- BD5229G
- BD52E33G
- BD5229G-TR
- BD49L43G
- EC76SMBJ30A
- BD49L43G-TL
- RP130Q291D
- BD5229FVE-TR
- BD5229FVE-TR
- BD5229G-TR
- BD5229
- BD49L43G-TR
- BD49L43G-TR
- BD5229FVE-TR
相關(guān)庫(kù)存
更多- MJD32CUQ-13
- MJD41C
- MJD41C
- MJD42C-Q
- MJD44H11
- MJD45H11
- MJD50TF-O-R-B-A
- MJE170-TU
- MJE171
- MJE172
- MJE3055
- LM4041DIDCKRG4
- LM4041DIDCKR.A
- LM4041DIDCKRG4.A
- SMBJ30A
- 1SMB30AT3
- BD5229
- BD5229G-TR
- BD5229
- BD49L43G-TL
- BD5229G-TR
- BD5229G-TR
- SSDJ30A
- BD5229
- P6SMB33
- P6SMBJ33
- BD5229G-TR
- BD5229G-TR
- SMBJ30A
- BD5229FVE
- BD49L43G-TL
- BD49L43
- BD49L43G-TR
- BD49L43G-TL
- BD5229FVE-TR
- BD49L43G-TL
- BD49L43G-TR
- BD49L43G-TR
- BD49L43G-TL
- BD5229G
- SMBJ30A
- BD49L43G-TR
- BD5229G-TR
- BD5229FVE-TR
- BD5229FVE-TR
