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          首頁 >MJD32>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MJD32C

          General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

          General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK, “- I” Suffix) ? Electrically Similar to Popular TIP32 and TIP32C

          文件:49.27 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          MJD32C

          SILICON POWER TRANSISTORS

          Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi

          文件:150.43 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          MJD32C

          Complementary Power Transistors

          Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi

          文件:129.229 Kbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導(dǎo)體

          MJD32C

          PNP SURFACE MOUNT TRANSISTOR

          Features ? BVCEO > -100V ? IC = -3A high Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Complementary NPN Type: MJD31C ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Gree

          文件:125.82 Kbytes 頁數(shù):6 Pages

          DIODES

          美臺半導(dǎo)體

          MJD32C

          Silicon PNP epitaxial planer Transistors

          Features ? Designed for General Purpose Amplifier and Low Speed Switching Applications ? Halogen Free Available Upon Request By Adding Suffix -HF ? Moisture Sensitivity Level 1 ? Epoxy Meets UL 94 V-0 Flammability Rating ? Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Comp

          文件:590.29 Kbytes 頁數(shù):4 Pages

          MCC

          MJD32C

          TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

          Description Designed for use in general purpose amplifier and switching applications.

          文件:244.26 Kbytes 頁數(shù):1 Pages

          DCCOM

          道全

          MJD32C

          isc Silicon PNP Power Transistors

          DESCRIPTION ? DC Current Gain -hFE = 25(Min)@ IC= -1A ? Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ? Complement to Type MJD31C ? DPAK for Surface Mount Applications ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed

          文件:261.22 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          MJD32C

          Silicon PNP Power Transistor

          DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.2V(Max) @IC= -3A ·Complement to Type MJD31C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

          文件:278.32 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MJD32C

          TO-251-3L Plastic-Encapsulate Transistors

          TRANSISTOR (PNP) FEATURES ? Designed for General Purpose Amplifier and Low Speed Switching Applications ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version in 16 mm Tape and Reel (“T4” Suffi

          文件:483.64 Kbytes 頁數(shù):3 Pages

          JIANGSU

          長電科技

          MJD32C

          Complementary Silicon Power Ttransistors

          DESCRIPTION It is intented for use in power amplif)ier and switching applications.

          文件:358.17 Kbytes 頁數(shù):1 Pages

          TGS

          晶體管資料

          • 型號:

            MJD32

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

          • 性質(zhì):

            低頻或音頻放大 (LF)_功率放大 (PA)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

          • 最大電流允許值:

            3A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

          • 最大耗散功率:

            15W

          • 放大倍數(shù):

          • 圖片代號:

            G-217

          • vtest:

            0

          • htest:

            999900

          • atest:

            3

          • wtest:

            15

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • AEC Qualified:

            A

          • Halide free:

            H

          • PPAP Capablee:

            P

          • Status:

            Active

          • Polarity:

            PNP

          • Type:

            General Purpose

          • VCE(sat) Max (V):

            1.2

          • IC Cont. (A):

            3

          • VCEO Min (V):

            40

          • VCBO (V):

            40

          • VEBO (V):

            5

          • VBE(on) (V):

            1.8

          • hFE Min:

            10

          • hFE Max:

            50

          • fT Min (MHz):

            3

          • PTM Max (W):

            15

          • Package Type:

            DPAK-3

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          更多MJD32供應(yīng)商 更新時(shí)間2026-1-19 15:30:00
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