MJD3055TF: NPN Bipolar Power Transistor, 10 A, 60 V

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. DC Current Gain Specified to 10 A\nHigh Current Gain-Bandwidth ProductfT = 2.0 MHz (Min) @ IC= 500 mA\nThese are PbFree Packages;

ONSEMI

安森美半導(dǎo)體

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS NPN 60V 10A DPAK

ONSEMI

安森美半導(dǎo)體

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. ? DC Current Gain Specified to 10 Amperes ? High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

文件：129.259 Kbytes 頁(yè)數(shù)：4 Pages

MOTOROLA

摩托羅拉

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

文件：65.19 Kbytes 頁(yè)數(shù)：4 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERAL PUPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (fT = 25 °C)

文件：216.66 Kbytes 頁(yè)數(shù)：6 Pages

SAMSUNG

三星