雙極晶體管 - 雙極結(jié)型晶體管(BJT) PNP Si Transistor Epitaxial

ONSEMI

安森美半導(dǎo)體

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：剪切帶（CT）帶盒（TB） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 25V 5A DPAK

ONSEMI

安森美半導(dǎo)體

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. ? Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ? High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

文件：255.72 Kbytes 頁數(shù)：6 Pages

MOTOROLA

摩托羅拉

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. Features ? Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ? High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc

文件：255.72 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

SILICON PNP TRANSISTOR

DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR

文件：63.53 Kbytes 頁數(shù)：4 Pages

STMICROELECTRONICS

意法半導(dǎo)體