D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications ? High DC Current Gain ? Low Collector Emitter Saturation Voltage ? Lead Formed for Surface Mount Applications (No Suffix) ? Straight Lead (I-PAK, “ - I “ Suffix)

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FAIRCHILD

仙童半導(dǎo)體

Complementary Plastic Power Transistors

Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low?power, high?gain audio amplifier applications. Features ? Collector?Emitter Sustaining Voltage ? VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc ? High DC Current Gain ? hFE

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ONSEMI

安森美半導(dǎo)體

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

■ DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ■ FEATURE * Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA * High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @

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UTC

友順

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. ? Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

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MOTOROLA

摩托羅拉

isc Silicon PNP Power Transistor

DESCRIPTION ? High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ? Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ? Complement to the NPN MJD200 ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for low

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ISC

無錫固電

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications

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ISC

無錫固電

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件：209.37 Kbytes 頁數(shù)：5 Pages

UTC

友順

Complementary Plastic Power Transistors

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ONSEMI

安森美半導(dǎo)體

Complementary Plastic Power Transistors

文件：87.9 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Bipolar Transistor

The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ? Collector-Emitter Sustaining Voltage \n? High DC Current Gain \n? =45 (Min) @ IC=-2A \n? Lead Formed for Surface Mount Applications in?? \n? Straight Lead Version in Plastic Sleeves (“-1” Suffix) \n? Low Collector – Emitter Saturation Voltage \n? = -0.75V (Max) @ IC = -2.0 A \n? fT = 65 MH;

UTC

友順