| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MJD200 | D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications (No Suffix) ? Straight Lead (I-PAK, “ - I “ Suffix) 文件:45.78 Kbytes 頁(yè)數(shù):5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
MJD200 | Complementary Plastic Power Transistors Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low?power, high?gain audio amplifier applications. Features ? Collector?Emitter Sustaining Voltage ? VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc ? High DC Current Gain ? hFE 文件:236.97 Kbytes 頁(yè)數(shù):6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MJD200 | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. ? Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc 文件:236.97 Kbytes 頁(yè)數(shù):6 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | |
MJD200 | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications 文件:302.22 Kbytes 頁(yè)數(shù):3 Pages | ISC 無(wú)錫固電 | ISC | |
MJD200 | Complementary Plastic Power Transistors 文件:87.9 Kbytes 頁(yè)數(shù):6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MJD200 | Complementary Plastic Power Transistors 文件:138.05 Kbytes 頁(yè)數(shù):6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MJD200 | Complementary Plastic Power Transistors 文件:152.01 Kbytes 頁(yè)數(shù):7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MJD200 | 5 A, 25 V NPN Bipolar Power Transistor The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices. ? Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc\n? High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc\n? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n? Straight Lead Version in Plastic Sle; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MJD200 | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS | 恩XP | 恩XP | |
MJD200 | Package:TO-252-3,DPak(2 引線 + 接片),SC-63;包裝:托盤(pán) 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 25V 5A DPAK | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MJD200
- 制造商:
onsemi
- 類(lèi)別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)
- 包裝:
托盤(pán)
- 晶體管類(lèi)型:
NPN
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):
1.8V @ 1A,5A
- 電流 - 集電極截止(最大值):
100nA(ICBO)
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
45 @ 2A,1V
- 頻率 - 躍遷:
65MHz
- 工作溫度:
-65°C ~ 150°C(TJ)
- 安裝類(lèi)型:
表面貼裝型
- 封裝/外殼:
TO-252-3,DPak(2 引線 + 接片),SC-63
- 供應(yīng)商器件封裝:
DPAK
- 描述:
TRANS NPN 25V 5A DPAK
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ACR |
23+ |
1688 |
房間現(xiàn)貨庫(kù)存:QQ:373621633 |
詢(xún)價(jià) | |||
ONSEMI |
25+ |
N/A |
21000 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢(xún)價(jià) | ||
ONFAI |
24+ |
6000 |
詢(xún)價(jià) | ||||
FAIRCHILD |
24+ |
原裝進(jìn)口原廠原包接受訂貨 |
3148 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
Central |
24+ |
TO-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
ON |
22+ |
SOT252 |
13475 |
進(jìn)口原裝 |
詢(xún)價(jià) | ||
ON |
25+ |
SOT252 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢(xún)價(jià) | ||
ON |
23+ |
TO-252 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢(xún)價(jià) | ||
MOT |
25+23+ |
TO252 |
49569 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
24+ |
SOP |
240 |
現(xiàn)貨供應(yīng) |
詢(xún)價(jià) |
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