DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. ? High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc ? Monolithic Construction with Built–in Base Emitter Shunt Resistor ? Junction Temperature to +200°C

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ONSEMI

安森美半導(dǎo)體

Power Transistors

Power Transistors TO-3 Case (Continued)

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CENTRAL

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. ? High Gain Darlington Performance ? High DC Current Gain hFE= 1000 (Min) @ IC = 20 A ? Monolithic Construction with Built?in Base Emitter Shun

文件：140.07 Kbytes 頁數(shù)：3 Pages

MOSPEC

統(tǒng)懋

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. ? High DC Current Gain - hFE= 1000 (Min) @ IC ?20 Adc ? Monolithic Construction with Built?in Base Emitter Shunt Resistor ? Junction Temperature to +200C

文件：157.15 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ? High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ? Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ? Complement to Type MJ11013 APPLICATIONS ? Designed for use as output devices i

文件：51.89 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

文件：96.68 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

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WINGS

永盛電子

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.52 Kbytes 頁數(shù)：1 Pages

SEME-LAB

200W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron

Trans Darlington NPN 90V 30A 3-Pin(2+Tab) TO-3 Sleeve

NJS