Silicon MOS IC

■ Features ● Allowing downsizing of the sets through the reduction of a parts count resulting from the voltage step-up utilizing a coil instead of a transformer and employing the thin surface mounting package. ● Allowing low voltage drive (adaptable to a small and low-voltage battery), or VC

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PANASONIC

松下

AC-DC轉(zhuǎn)換器/電源IC (IPD) (批量生產(chǎn)終止產(chǎn)品)

Panasonic

松下

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general?purpose amplifier and low?speed switching applications. Features ? High DC Current Gain ? hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built?in Base?Emitter Resistors to Limit Leakage ? Multiplication ? Choice of Packages ? M

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ONSEMI

安森美半導(dǎo)體

SILICON NPN POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES

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STMICROELECTRONICS

意法半導(dǎo)體

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. ? High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication ? Choice of Packages — MJE700 and MJE800 series

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MOTOROLA

摩托羅拉