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    首頁 >IRLR024>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IRLR024N

    HEXFET Power MOSFET

    Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

    文件:162.2 Kbytes 頁數(shù):10 Pages

    IRF

    IRLR024N

    N-Channel MOSFET Transistor

    ? DESCRITION ? Fast Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤65m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

    文件:334.74 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    IRLR024NPBF

    HEXFET Power MOSFET

    Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

    文件:304.82 Kbytes 頁數(shù):10 Pages

    IRF

    IRLR024NTRL

    Logic-Level Gate Drive

    Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

    文件:173.02 Kbytes 頁數(shù):11 Pages

    IRF

    IRLR024PBF

    Power MOSFET

    DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

    文件:1.38953 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRLR024TR

    Power MOSFET

    DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

    文件:1.38953 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRLR024TRPBF

    Power MOSFET

    DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

    文件:1.38953 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRLR024Z

    AUTOMOTIVE MOSFET

    Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

    文件:215.66 Kbytes 頁數(shù):11 Pages

    IRF

    IRLR024ZPBF

    AUTOMOTIVE MOSFET

    Description Specifically designed for Automotive applications, this HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

    文件:281.89 Kbytes 頁數(shù):12 Pages

    IRF

    IRLR024_09

    Power MOSFET

    文件:1.2042 Mbytes 頁數(shù):10 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    技術(shù)參數(shù)

    • OPN:

      IRLR024NTRLPBF/IRLR024NTRPBF

    • Qualification:

      Non-Automotive

    • Package name:

      DPAK/DPAK

    • VDS max:

      55 V

    • RDS (on) @10V max:

      65 m?/65 m?

    • RDS (on) @4.5V max:

      110 m?/110 m?

    • ID @25°C max:

      17 A/17 A

    • QG typ @4.5V:

      10 nC/10 nC

    • Polarity:

      N

    • VGS(th) min:

      1 V/1 V

    • VGS(th) max:

      2 V/2 V

    • VGS(th):

      1.5 V/1.5 V

    • Technology:

      IR MOSFET?/IR MOSFET?

    供應(yīng)商型號品牌批號封裝庫存備注價格
    IR
    23+
    TO-252
    6500
    原廠原裝正品
    詢價
    IR
    2450+
    TO-252
    9850
    只做原裝正品現(xiàn)貨或訂貨假一賠十!
    詢價
    IR
    06+
    原廠原裝
    4208
    只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
    詢價
    IR
    23+
    TO-252
    7500
    絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
    詢價
    IR
    25+
    TO-252
    399
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    IR
    24+
    TO-252
    5825
    公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
    詢價
    IR
    17+
    TO-252
    6200
    100%原裝正品現(xiàn)貨
    詢價
    IR
    25+
    TO-252
    2987
    只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
    詢價
    IR
    23+
    TO-252
    11846
    一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
    詢價
    IR
    23+
    TO-252
    10000
    專做原裝正品,假一罰百!
    詢價
    更多IRLR024供應(yīng)商 更新時間2026-1-20 9:43:00

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