Film Resistors

Film Resistors Resistances from 50kOhm to 2GOhms Power Rating to 3Watts Resistance Tolerances to ±0.5 Max. working voltage to 10000V Convenient RN Type Package Styles

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RIEDON

Film Resistors

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WILLOW

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

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TOSHIBA

東芝

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

文件：319.61 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

TOSHIBA IGBT Module Silicon N Channel IGBT

High Power Switching Applications Motor Control Applications ● Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) ● The electrodes are isolated from case. ● Low thermal resistance ● VCE (sat) = 2.1 V (typ.)

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TOSHIBA

東芝

Dual IGBTMOD

Description: Powerex Dual IGBTMOD? Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge confi guration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and inter

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POWEREX

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILIOCN N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

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TOSHIBA

東芝

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

High Power Switching Applications Motor Control Applications ● High input impedance ● High speed : tf = 0.3μs (Max) @Inductive load ● Low saturation voltage : VCE (sat) = 3.6V (Max) ● Enhancement-mode ● Includes a complete half bridge in onepackage. ● The electrodes are isolated from case.

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TOSHIBA

東芝

TOSHIBA IGBT Module Silicon N Channel IGBT

High Power Switching Applications Motor Control Applications ● High input impedance ● High speed: tf = 0.3 μs (max) Inductive load ● Low saturation voltage: VCE (sat) = 2.6 V (max) ● The electrodes are isolated from case. ● Enhancement-mode

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TOSHIBA

東芝

High-Power Module Silicon Carbide N-Channel MOSFET

Applications ? High-Power Switching ? Motor Controllers (including rail traction) Features (1) VDSS = 1200 V, ID = 600 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150 , built in temperature sensor. (3) Enhancement

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TOSHIBA

東芝