High Power Differential Line Driver

The EL1503A ADSL Line Driver contains two wideband high-voltage drivers which are ideally suited for both ADSL and HDSL2 applications. They can supply a 39.2VP-P signal into a 22Ω load while exhibiting very low distortion. The EL1503A also has a number of power saving features. The IADJ pin can be

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INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 159.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.3mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

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絲印：08N032；Package：TO-220；Single N-channel Trench MOSFET 80V 3.23mΩ 120A

General description The MDP08N032TH uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. MDP08N032TH is suitable device for Motor Drive applications and general purpose applications. Featu

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MGCHIP

Single N-channel Trench MOSFET 80V

General Description The MDP08N055TH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bik

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MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 130A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

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N-Channel MOSFET 600V, 10A, 0.7(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

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MGCHIP

N-Channel MOSFET 600V, 10A, 0.7(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

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MGCHIP

isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220F packaging ? High speed switching ? Very high commutation ruggedness ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operationz ? APPLICATIONS ? PFC stages ? LCD & PDP TV ? Power supply ? Sw

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ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

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