| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
ELECTRICAL CHARACTERISTICS Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications. 文件：103.67 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
ELECTRICAL CHARACTERISTICS Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications. 文件：103.67 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
DUAL AMPLIFIER TRANSISTOR DUAL AMPLIFIER TRANSISTOR PNP SILICON 文件：231.16 Kbytes 頁數(shù)：7 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
ELECTRICAL CHARACTERISTICS Dual PNP silicon annular transistors, especially designed for low-level, differential amplifier applications. 文件：103.67 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
ME/MD SERIES FEATURES e? High current ratings(max 200A) ? Good shield effect by using metal case ? Epoxy molded for reliability(model MD series) ? Two hole lug type terminal connection(model ME series) APPLICATIONS @? Cellular base stations. ? Telecommunication switching networks and racks. 文件：1.18237 Mbytes 頁數(shù)：2 Pages | DIT | DIT | ||
ME/MD SERIES FEATURES e? High current ratings(max 200A) ? Good shield effect by using metal case ? Epoxy molded for reliability(model MD series) ? Two hole lug type terminal connection(model ME series) APPLICATIONS @? Cellular base stations. ? Telecommunication switching networks and racks. 文件：1.18237 Mbytes 頁數(shù)：2 Pages | DIT | DIT | ||
ME/MD SERIES FEATURES e? High current ratings(max 200A) ? Good shield effect by using metal case ? Epoxy molded for reliability(model MD series) ? Two hole lug type terminal connection(model ME series) APPLICATIONS @? Cellular base stations. ? Telecommunication switching networks and racks. 文件：1.18237 Mbytes 頁數(shù)：2 Pages | DIT | DIT | ||
35A MOTOROLA TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0μA 文件：30.16 Kbytes 頁數(shù)：2 Pages | WTE Won-Top Electronics | WTE | ||
35A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA 文件：40.7 Kbytes 頁數(shù)：2 Pages | WTE Won-Top Electronics | WTE | ||
35A MOTOROLA TYPE PRESS-FIT DIODE Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0μA 文件：30.16 Kbytes 頁數(shù)：2 Pages | WTE Won-Top Electronics | WTE |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
射頻/高頻放大 （HF）_調(diào)幅 （AM）
- 封裝形式：
直插封裝
- 極限工作電壓：
50V
- 最大電流允許值：
0.05A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
6
- 可代換的型號：
3CG122F,
- 最大耗散功率：
0.625W
- 放大倍數(shù)：
- 圖片代號：
D-48
- vtest：
50
- htest：
999900
- atest：
0.05
- wtest：
0.625
技術(shù)參數(shù)
- VRRM（V）：
800
- IF（A）：
300
- @TC （℃）：
85
- IFSM 10ms (A)：
11000
- IRRM 150℃ (mA)：
15
- VFM (V)：
1.8
- @IF (A)：
900
- Rth(j-c) (℃/W)：
0.04
- Viso：
2500
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
DIP4 |
1000 |
詢價 | ||||
INTERSIL |
2450+ |
SC70-3 |
6540 |
只做原廠原裝正品終端客戶免費申請樣品 |
詢價 | ||
MN |
1430+ |
DIP |
5800 |
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品 |
詢價 | ||
SITI |
13+ |
CSP-6 |
4248 |
原裝分銷 |
詢價 | ||
M-SYSTEMS |
17+ |
BGA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
M-SYSTEMS |
24+ |
12 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | |||
FUJI |
QFP |
97 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
Microchip |
24+ |
SMD |
17900 |
射頻開發(fā)工具 |
詢價 | ||
MOTOROLA |
24+ |
CAN6 |
1200 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
FUJIFILM |
16+ |
QFP |
8000 |
原裝現(xiàn)貨請來電咨詢 |
詢價 |
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