| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MCH6342 | Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? Low On-Resistance ? 1.8V dr 文件:533.78 Kbytes 頁數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MCH6342 | General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features ? Low ON-resistance ? Ultrahigh-speed switching ? 1.8V drive ? Halogen free compliance ? Protection diode in 文件:89.71 Kbytes 頁數(shù):4 Pages | SANYO 三洋 | SANYO | |
MCH6342 | General-Purpose Switching Device Applications 文件:472.42 Kbytes 頁數(shù):7 Pages | SANYO 三洋 | SANYO | |
MCH6342 | P-Channel 20 V (D-S) MOSFET 文件:1.05712 Mbytes 頁數(shù):9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | |
MCH6342 | 單 P 溝道,功率 MOSFET,-30V,-4.5A,73mΩ This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. ? Pb-Free, Halogen Free and RoHS Compliance\n? Environmental Consideration\n? Low On-Resistance\n? Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n? Ultra Small Package MCPH6 (2.0mm x 2.1mm x 0.85mmt)\n? Board Space Saving\n? ESD Diode-Protected Gate\n? ESD Resistance\n?; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? Low On-Resistance ? 1.8V dr 文件:533.78 Kbytes 頁數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? Low On-Resistance ? 1.8V dr 文件:533.78 Kbytes 頁數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
General-Purpose Switching Device Applications 文件:472.42 Kbytes 頁數(shù):7 Pages | SANYO 三洋 | SANYO |
技術(shù)參數(shù)
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
P-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
-30
- VGS Max (V):
10
- VGS(th) Max (V):
1.3
- ID Max (A):
-4.5
- PD Max (W):
1.5
- RDS(on) Max @ VGS = 2.5 V(mΩ):
99
- RDS(on) Max @ VGS = 4.5 V(mΩ):
73
- Qg Typ @ VGS = 4.5 V (nC):
20.5
- Qg Typ @ VGS = 10 V (nC):
8.6
- Ciss Typ (pF):
650
- Package Type:
SC-88FL/MCPH-6
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
20+ |
SOT-363 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
O |
23+ |
MCPH6 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
ON |
2022+ |
SC-88FL / MCPH-6 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
ONSEMI/安森美 |
2511 |
SOT-363 |
360000 |
電子元器件采購降本30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
VBsemi/臺灣微碧 |
22+ |
MCPH6 |
20000 |
公司只做原裝 品質(zhì)保證 |
詢價(jià) | ||
ON |
24+/25+ |
2975 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
ON |
1706+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
SOT-323 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
SANYO |
19+ |
MCPH-6 |
200000 |
詢價(jià) |
相關(guān)規(guī)格書
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- SI7970DP
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- SI7948DP
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- SE1
- PI7C8150B
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- PERICOMPI7C8150
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