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          首頁 >MCD>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MCD132-16IO1

          Thyristor Modules Thyristor/Diode Modules

          Features ● International standard package ● Direct copper bonded Al2O3 -ceramic base plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Applications ● Motor control ● Power converter ● Heat and temperature control for indus

          文件:172.68 Kbytes 頁數(shù):4 Pages

          IXYS

          艾賽斯

          MCD132-16IO1

          Thyristor Diode Module

          Features ● International standard package ● Direct copper bonded Al2O3 -ceramic base plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Applications ● Motor control ● Power converter ● Heat and temperature control for indus

          文件:223.73 Kbytes 頁數(shù):6 Pages

          IXYS

          艾賽斯

          MCD132-18IO1

          Thyristor Diode Module

          Features ● International standard package ● Direct copper bonded Al2O3 -ceramic base plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Applications ● Motor control ● Power converter ● Heat and temperature control for indus

          文件:223.6 Kbytes 頁數(shù):6 Pages

          IXYS

          艾賽斯

          MCD132-18IO1

          Thyristor Modules Thyristor/Diode Modules

          Features ● International standard package ● Direct copper bonded Al2O3 -ceramic base plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Applications ● Motor control ● Power converter ● Heat and temperature control for indus

          文件:172.68 Kbytes 頁數(shù):4 Pages

          IXYS

          艾賽斯

          MCD161-20IO1

          High Voltage Thyristor Module

          Features ? International standard package ? Direct Copper Bonded Al2O3-ceramic base plate ? Planar passivated chips ? Isolation voltage 3600 V~ ? UL registered, E 72873 ? Keyed gate/cathode twin pins Applications ? Motor control ? Power converter ? Heat and temperature control for indust

          文件:92.34 Kbytes 頁數(shù):3 Pages

          IXYS

          艾賽斯

          MCD161-20IO1

          High Voltage Thyristor Diode Module

          Features ? International standard package ? Direct Copper Bonded Al2O3-ceramic base plate ? Planar passivated chips ? Isolation voltage 3600 V~ ? UL registered, E 72873 ? Keyed gate/cathode twin pins Applications ? Motor control ? Power converter ? Heat and temperature control for indust

          文件:231.75 Kbytes 頁數(shù):6 Pages

          IXYS

          艾賽斯

          MCD161-22IO1

          High Voltage Thyristor Diode Module

          Features ? International standard package ? Direct Copper Bonded Al2O3-ceramic base plate ? Planar passivated chips ? Isolation voltage 3600 V~ ? UL registered, E 72873 ? Keyed gate/cathode twin pins Applications ? Motor control ? Power converter ? Heat and temperature control for indust

          文件:231.75 Kbytes 頁數(shù):6 Pages

          IXYS

          艾賽斯

          MCD161-22IO1

          High Voltage Thyristor Module

          Features ? International standard package ? Direct Copper Bonded Al2O3-ceramic base plate ? Planar passivated chips ? Isolation voltage 3600 V~ ? UL registered, E 72873 ? Keyed gate/cathode twin pins Applications ? Motor control ? Power converter ? Heat and temperature control for indust

          文件:92.34 Kbytes 頁數(shù):3 Pages

          IXYS

          艾賽斯

          MCD162-08IO1

          Thyristor Diode Module

          Features ● International standard package ● Direct copper bonded Al2O3 -ceramic base plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Applications ● Motor control ● Power converter ● Heat and te

          文件:222.1 Kbytes 頁數(shù):6 Pages

          IXYS

          艾賽斯

          MCD162-12IO1

          Thyristor Diode Module

          Features ● International standard package ● Direct copper bonded Al2O3 -ceramic base plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Applications ● Motor control ● Power converter ● Heat and te

          文件:222.11 Kbytes 頁數(shù):6 Pages

          IXYS

          艾賽斯

          技術(shù)參數(shù)

          • Polarity:

            ?N-Channel

          • Drain-Source Voltage VDS (V):

            ?600

          • Gate-Source Voltage VGS(V):

            ?±30

          • Drain Current IDMAX (A):

            ?2.0

          • Drain-Source On Resistance MAX(Ω):

            ?2.2

          • Input Capacitance CISSMAX (pF):

            ?118

          • Gate Threshold Voltage VGS(th)-Min:

            ?2.0

          • Gate Threshold Voltage VGS(th)-Max:

            ?4.0

          • Package Qty:

            ?Bulk

          • FIT:

            ?30; Tj=100℃

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          更多MCD供應(yīng)商 更新時間2026-1-20 10:19:00
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