| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo 文件:231.67 Kbytes 頁數(shù):16 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo 文件:231.67 Kbytes 頁數(shù):16 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo 文件:231.67 Kbytes 頁數(shù):16 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 頁數(shù):12 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Radial Leaded PTC Resettable Fuse [multicomp] Specifications: Lead Material : Tin plated copper Soldering Characteristic : MIL-DTD-202, Method 208E Insulating Coating : Flame retardant epoxy Operating Current : 100mA to 3.75A Max. Voltage : Up to 90V Temperature Range : -40°C to 85°C Applications : Telecom and wide variety 文件:275.99 Kbytes 頁數(shù):3 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 頁數(shù):12 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 頁數(shù):12 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Radial Leaded PTC Resettable Fuse [multicomp] Specifications: Lead Material : Tin plated copper Soldering Characteristic : MIL-DTD-202, Method 208E Insulating Coating : Flame retardant epoxy Operating Current : 100mA to 3.75A Max. Voltage : Up to 90V Temperature Range : -40°C to 85°C Applications : Telecom and wide variety 文件:275.99 Kbytes 頁數(shù):3 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 頁數(shù):12 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 頁數(shù):12 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Rail to Rail:
No
- Channels:
2
- VS Min (V):
4
- VS Max (V):
36
- Iq Typ (mA):
0.425
- VOS Max (mV):
3
- GBW Typ (MHz):
5
- SR Typ (V/μs):
2
- IO Typ (mA):
80
- ΔVOS/ΔT (μV/C):
2
- eN (nV/√Hz):
7.5
- Ibias Typ (pA):
100000
- CMRR Typ (dB):
110
- Architecture:
Bipolar
- Temperature Range (°C):
-40 to 85
- Package Type:
Micro8?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
標(biāo)準(zhǔn)封裝 |
13901 |
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障 |
詢價(jià) | ||
ON(安森美) |
2511 |
4560 |
電子元器件采購降本 30%!公司原廠直采,砍掉中間差價(jià) |
詢價(jià) | |||
MOT |
23+ |
SOP-8 |
2800 |
絕對全新原裝!現(xiàn)貨!特價(jià)!請放心訂購! |
詢價(jià) | ||
MOT |
24+ |
SOP-8 |
7000 |
詢價(jià) | |||
ON |
25+ |
TO-220-5 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
MOT |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
MOT |
24+ |
SOP8 |
4652 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) | ||
MOT |
24+ |
SOP-8 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
MOT |
25+ |
SOP8 |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
MOT |
92 |
SOIC/3.9mm |
2 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) |
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