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          首頁 >MC14069>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MC14069

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UB

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UBCP

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UBD

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UBDR2

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UBDT

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UBDTEL

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UBDTR2

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UBF

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14069UBFEL

          Hex Inverter

          The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

          文件:171.8 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • AEC Qualified:

            A

          • Halide free:

            H

          • PPAP Capablee:

            P

          • Status:

            Active

          • Type:

            Inverter

          • Channels:

            6

          • VCC Min (V):

            3

          • VCC Max (V):

            18

          • tpd Max (ns):

            100

          • IO Max (mA):

            null

          • Package Type:

            SOIC-14

          供應(yīng)商型號品牌批號封裝庫存備注價格
          24+
          SMD14
          3000
          公司現(xiàn)貨
          詢價
          ON
          24+
          DIP
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價
          ON
          24+
          SO-14
          50000
          一級代理進口原裝現(xiàn)貨假一賠十
          詢價
          ON
          19+
          SOP
          5000
          只做原裝可拆樣品
          詢價
          MOT
          25+
          SOP16
          4500
          全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
          詢價
          ON
          23+
          SOP
          11000
          正品原裝貨價格低
          詢價
          MOTOLORA
          2025+
          SOP16
          4816
          全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
          詢價
          MOT
          2410+
          DIP
          6800
          優(yōu)勢代理渠道 原裝現(xiàn)貨 可全系列訂貨
          詢價
          MOTOROLA/摩托羅拉
          2450+
          SOP
          6540
          只做原裝正品現(xiàn)貨!或訂貨假一賠十!
          詢價
          ON
          2012+
          DIP-14
          10000
          全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品
          詢價
          更多MC14069供應(yīng)商 更新時間2026-1-21 16:01:00
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