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    首頁
                >MBRS330>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    MBRS330
    SCHOTTKY BARRIER RECTIFIERS
    
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
These devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi
    文件：51.38 Kbytes 頁數(shù)：4 Pages
    ONSEMI
    安森美半導體
    

    MBRS330
    SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER
    
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current c
    文件：535.46 Kbytes 頁數(shù)：3 Pages
    SY
    順燁電子
    

    MBRS330
    3A 30V Schottky diode
    文件：317.242 Kbytes 頁數(shù)：2 Pages
    SUNMATE
    森美特
    PDF上傳者：深圳冠榮電子有限公司
    

    MBRS330
    肖特基二極體
    Sunmate
    森美特
    

    MBRS330T3
    SCHOTTKY BARRIER RECTIFIERS
    
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
These devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi
    文件：51.38 Kbytes 頁數(shù)：4 Pages
    ONSEMI
    安森美半導體
    

    MBRS330T3G
    Surface Mount Schottky Power Rectifier
    
These devices employ the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and po
    文件：184.59 Kbytes 頁數(shù)：5 Pages
    ONSEMI
    安森美半導體
    

    MBRS330T3G
    Surface Mount Schottky Power Rectifier
    
These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polari
    文件：106.86 Kbytes 頁數(shù)：4 Pages
    ONSEMI
    安森美半導體
    

    MBRS330P
    Surface Mount Schottky Power Rectifier
    文件：66.36 Kbytes 頁數(shù)：4 Pages
    ONSEMI
    安森美半導體
    

    MBRS330PT3G
    Surface Mount Schottky Power Rectifier
    文件：66.36 Kbytes 頁數(shù)：4 Pages
    ONSEMI
    安森美半導體
    

    MBRS330T3
    Surface Mount Schottky Power Rectifier
    文件：98.51 Kbytes 頁數(shù)：4 Pages
    ONSEMI
    安森美半導體
    

    
            
    
		
        
    
            
    
                
    技術參數(shù)
    
            
    
            
      
            	
    • AEC-Q101Qualified：
      _
    • IF(A）：
      3
    • VRRM(V)：
      30
    • VRMS(V)：
      21
    • VDC(V)：
      30
    • IFSM(A)：
      80
    • VF(v)：
      0.5
    • TRR(NS)：
      _
    
            
    
        
    
            
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    更多MBRS330供應商
            更新時間2026-1-22 9:38:00
        
    
        
    
          
    
            
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