Schottky Power Rectifier

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安森美半導(dǎo)體

肖特基功率整流器，表面貼裝，1.0 A，30 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif ? Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25 °C)\n? Small Compact Surface Mountable Package with J-Bend Leads\n? Highly Stable Oxide Passivated Junction\n? Guardring for Stress ProtectionMechanical Characteristics:\n? Case: Epoxy, Molded\n? Weight: 95 mg (approximately)\n? ;

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安森美半導(dǎo)體

DIODE SCHOTTKY

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安森美半導(dǎo)體

Package：DO-214AA，SMB；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 30V 2A SMB

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安森美半導(dǎo)體

Package：DO-214AA，SMB；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY

ONSEMI

安森美半導(dǎo)體