| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SWITCHMODE??Schottky Power Rectifier SWITCHMODE? Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rect 文件:82.63 Kbytes 頁(yè)數(shù):4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Dual Common-Cathode Schottky Rectifier FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO- 文件:512.69 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Common-Cathode Schottky Rectifier FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO- 文件:512.69 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Common-Cathode Schottky Rectifier FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO- 文件:512.69 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Switch-mode Schottky Power Rectifier SWITCHMODE? Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rect 文件:59.35 Kbytes 頁(yè)數(shù):4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Switch-mode Schottky Power Rectifier The Switch?mode Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?freque 文件:173.19 Kbytes 頁(yè)數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
SWITCHMODE??Schottky Power Rectifier SWITCHMODE? Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rect 文件:82.63 Kbytes 頁(yè)數(shù):4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Switch-mode Schottky Power Rectifier The Switch?mode Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?freque 文件:173.19 Kbytes 頁(yè)數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Dual Common-Cathode Schottky Rectifier FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO- 文件:512.69 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Common-Cathode Schottky Rectifier FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO- 文件:512.69 Kbytes 頁(yè)數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- Pb-free:
Pb
- Status:
Active
- Configuration:
Common Cathode
- VRRM Min (V):
45
- VF Max (V):
0.7
- IRM Max (μA):
200
- IO(rec) Max (A):
25
- IFSM Max (A):
150
- Package Type:
TO-220-3 FullPak
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO-2203LEADFULLPA |
8866 |
詢價(jià) | |||
ON |
25+ |
TO247 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
ON |
2015+ |
TO-2203 |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
ON |
23+ |
TO220 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
Vishay |
17+ |
TO-220F |
6200 |
詢價(jià) | |||
ON |
23+ |
TO-220-3 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
GS |
23+ |
TO-220F |
10000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
VISHAY |
144 |
TO-220 |
50 |
特價(jià)銷售歡迎來電!! |
詢價(jià) | ||
ON |
20+ |
38500 |
全新現(xiàn)貨熱賣中歡迎查詢 |
詢價(jià) |
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