Dual Common-Cathode High-Voltage Schottky Rectifier

文件：154.98 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：183.36 Kbytes 頁數(shù)：2 Pages

TSC

臺灣半導體

Dual Common Cathode Schottky Rectifier

文件：231.87 Kbytes 頁數(shù)：4 Pages

TSC

臺灣半導體

Plastic material used carries Underwriters Laboratory Classifications 94V-0

文件：921.52 Kbytes 頁數(shù)：2 Pages

KERSEMI

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please s

文件：128.53 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency. ? High current capability ? For use in low voltage, high frequen

文件：598.94 Kbytes 頁數(shù)：3 Pages

DYELEC

迪一電子

Dual Common-Cathode High-Voltage Schottky Rectifier

文件：78.98 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLow power losses, high efficiency\nLow forward voltage drop;

Vishay

威世

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

Vishay

威世

Package：TO-220-3 全封裝，隔離接片；包裝：卷帶（TR） 類別：分立半導體產品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 90V ITO220

Vishay General Semiconductor - Diodes Division