絲?。?strong>MBRF2060CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part,

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CITC

竹懋科技

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

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SAMYANG

三陽電子

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?frequency s

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KERSEMI

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

文件：643.53 Kbytes 頁數(shù)：2 Pages

KERSEMI

Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0

FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-

文件：123.68 Kbytes 頁數(shù)：2 Pages

KERSEMI

Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

文件：123.64 Kbytes 頁數(shù)：2 Pages

KERSEMI

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?frequency s

文件：134.16 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導體

Dual Common-Cathode Schottky Rectifier

FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-

文件：512.98 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER TYPE DIODE

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES ? Average Output Rectified Current : IO=20A. ? Repetitive Peak Reverse Voltage : VRRM=60V. ? Fast Reverse Recovery Time : trr=35ns.

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KEC

KEC(Korea Electronics)

Free-wheeling diodes

Description Littelfuse MBR series Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pr

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LITTELFUSE

力特