SCHOTTKY RECTIFIER

Features: ? 150 °C TJ operation ? Center tap configuration ? Low forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：122.74 Kbytes 頁數：7 Pages

SMC

桑德斯微電子

20 Ampere Insulated Dual Common Cathode Schottky Half Bridge Rectifiers

Features ? Plastic material used carries Underwriters Laboratory Classifications 94V-0 ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency ? High current capability, low forward voltage drop ? High surge capability ? For use in low voltage, high freque

文件：415.67 Kbytes 頁數：2 Pages

THINKISEMI

思祁半導體

Schottky Diode in a TO-220F Plastic Package

Descriptions Schottky Diode in a TO-220F Plastic Package. Features Low power loss,high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications.

文件：1.05992 Mbytes 頁數：6 Pages

FOSHAN

藍箭電子

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency. ? High current capability ? For use in low voltage, high frequency

文件：1.23642 Mbytes 頁數：3 Pages

DYELEC

迪一電子

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?frequency s

文件：455.63 Kbytes 頁數：4 Pages

KERSEMI

SCHOTTKY BARRIER TYPE DIODE

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?frequency s

文件：766.47 Kbytes 頁數：2 Pages

KERSEMI

Dual Common-Cathode Ultra Low VF Schottky Rectifier

Features ? Guard ring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? Low leakage current ? High forward surge capability ? High frequency operation ? Solder Dip 260 °C, 40 s ? Component in accordance to ROHS 2002/95/EC and WEEE 2002/96/EC

文件：346.49 Kbytes 頁數：4 Pages

BWTECH

MBRF20200CT (CTR) SCHOTTKY RECTIFIER

Features 175?C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb ? Fre

文件：851.48 Kbytes 頁數：4 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.48791 Mbytes 頁數：2 Pages

SAMYANG

三陽電子

絲?。?a target="_blank" title="Marking" href="/mbrf20200ct/marking.html">MBRF20200CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 頁數：3 Pages

CITC

竹懋科技