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    首頁
                >MBRD1035C>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    MBRD1035C
    Schottky Diodes
    文件：1.24189 Mbytes 頁數(shù)：3 Pages
    KEXIN
    科信電子
    

    MBRD1035CTL
    10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
    
Features
? Guard Ring Die Construction for
   Transient Protection
? Low Power Loss, High Efficiency
? High Surge Capability
? Very Low Forward Voltage Drop
? For Use in Low Voltage, High Frequency
   Inverters, OR’ing, and Polarity Protection
   Applications
? Plastic Material: UL Flamma
    文件：63.87 Kbytes 頁數(shù)：3 Pages
    DIODES
    美臺半導體
    

    MBRD1035CTL
    SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package
    
SWITCHMODE Schottky Power Rectifier
DPAK Power Surface Mount Package
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol
    文件：158.19 Kbytes 頁數(shù)：6 Pages
    MOTOROLA
    摩托羅拉
    

    MBRD1035CTL
    SWITCHMODE Schottky Power Rectifier
    
Switch-mode Schottky Power Rectifier
DPAK Power Surface Mount Package
The MBRD1035CTL employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo
    文件：104.04 Kbytes 頁數(shù)：6 Pages
    ONSEMI
    安森美半導體
    

    MBRD1035CTL
    Schottky Power Rectifier, Switch Mode, 10 A, 35 V
    
The MBRD1035CTL employs the Schottky Barrier principle in a
large area metal?to?silicon power diode. State of the art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
switching power supplies, free wheelin
    文件：231.35 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導體
    

    MBRD1035CTL_V01
    Schottky Power Rectifier, Switch Mode, 10 A, 35 V
    
The MBRD1035CTL employs the Schottky Barrier principle in a
large area metal?to?silicon power diode. State of the art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
switching power supplies, free wheelin
    文件：231.35 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導體
    

    MBRD1035CTLG
    Schottky Power Rectifier, Switch Mode, 10 A, 35 V
    
The MBRD1035CTL employs the Schottky Barrier principle in a
large area metal?to?silicon power diode. State of the art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
switching power supplies, free wheelin
    文件：231.35 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導體
    

    MBRD1035CTLG
    SWITCHMODE Schottky Power Rectifier
    
Switch-mode Schottky Power Rectifier
DPAK Power Surface Mount Package
The MBRD1035CTL employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo
    文件：120.16 Kbytes 頁數(shù)：6 Pages
    ONSEMI
    安森美半導體
    

    MBRD1035CTL-T
    10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
    
Features
? Guard Ring Die Construction for
   Transient Protection
? Low Power Loss, High Efficiency
? High Surge Capability
? Very Low Forward Voltage Drop
? For Use in Low Voltage, High Frequency
   Inverters, OR’ing, and Polarity Protection
   Applications
? Plastic Material: UL Flamma
    文件：63.87 Kbytes 頁數(shù)：3 Pages
    DIODES
    美臺半導體
    

    MBRD1035CTLT4
    SWITCHMODE Schottky Power Rectifier
    
Switch-mode Schottky Power Rectifier
DPAK Power Surface Mount Package
The MBRD1035CTL employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo
    文件：104.04 Kbytes 頁數(shù)：6 Pages
    ONSEMI
    安森美半導體
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Pb-free：
      Pb
    • AEC Qualified：
      A
    • Halide free：
      H
    • PPAP Capablee：
      P
    • Status：
      Active
    • Configuration：
      Common Cathode
    • VRRM Min (V)：
      35
    • VF Max (V)：
      0.56
    • IRM Max (μA)：
      2000
    • IO(rec) Max (A)：
      10
    • IFSM Max (A)：
      50
    • Package Type：
      DPAK-3
    
            
    
        
    
            
    供應商型號品牌批號封裝庫存備注價格
    
                
    



    ON/安森美
    		

    2022+
    		

    TO-252
    		

    953
    		

    原廠代理 終端免費提供樣品
    		
詢價
    

    



    SOT-252
    		

    23+
    		

    10
    		

    13000
    		

    原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
    		
詢價
    

    



    ON/安森美
    		

    2022+
    		

    TO-252
    		

    30000
    		

    進口原裝現(xiàn)貨供應,絕對原裝 假一罰十
    		
詢價
    

    



    ON/安森美
    		

    20+
    		

    TO-252
    		

    953
    		

    現(xiàn)貨很近!原廠很遠!只做原裝
    		
詢價
    

    



    ONSEMICONDUC
    		

    05+
    		

    原廠原裝
    		

    6116
    		

    只做全新原裝真實現(xiàn)貨供應
    		
詢價
    

    



    ON
    		

    1415+
    		

    TO-252
    		

    28500
    		

    全新原裝正品,優(yōu)勢熱賣
    		
詢價
    

    



    ON
    		

    24+/25+
    		

    		

    395
    		

    原裝正品現(xiàn)貨庫存價優(yōu)
    		
詢價
    

    



    ON
    		

    25+
    		

    to-252
    		

    5000
    		

    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    		
詢價
    

    



    ON
    		

    17+
    		

    TO-252
    		

    6200
    		

    100%原裝正品現(xiàn)貨
    		
詢價
    

    



    ON
    		

    24+
    		

    SOT-252
    		

    1387
    		

    原裝深圳現(xiàn)貨特價
    		
詢價
    

            
    
        
    
        
    更多MBRD1035C供應商
            更新時間2026-1-22 14:02:00
        
    
        
    
          
    
            
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