| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MBRAF3200 | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：196.09 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MBRAF3200 | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：129.539 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MBRAF3200 | Surface Mount Schottky Power Rectifier 文件：68.83 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MBRAF3200 | 200 V，3.0 A，肖特基整流器 This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity ? Small Compact Surface Mountable Package with J-Bend Leads\n? Rectangular Package for Automated Handling\n? Highly Stable Oxide Passivated Junction\n? Very High Blocking Voltage - 200 V\n? 150°C Operating Junction Temperature\n? Guard-Ring for Stress Protection\n? This is a Pb-Free DeviceMechanical; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：129.539 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：196.09 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：196.09 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：129.539 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Surface Mount Schottky Power Rectifier 文件：67.87 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Surface Mount Schottky Power Rectifier 文件：67.87 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Configuration：
Single
- VRRM Min (V)：
200
- VF Max (V)：
0.84
- IRM Max (μA)：
1000
- IO(rec) Max (A)：
3
- IFSM Max (A)：
100
- Package Type：
SMA-FL
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2019+PB |
SMA-FL |
34000 |
原裝正品 可含稅交易 |
詢價 | ||
ON/安森美 |
2025+ |
SMA-FL |
5000 |
原裝進(jìn)口價格優(yōu) 請找坤融電子! |
詢價 | ||
VISHAYMAS |
25+23+ |
SMAFL |
53163 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
ON |
20+ |
SMA-FL |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON/安森美 |
21+ |
SMAFL |
30000 |
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價 | ||
ON/安森美 |
新年份 |
SMA-FL |
34000 |
原裝正品大量現(xiàn)貨,要多可發(fā)貨,實(shí)單帶接受價來談! |
詢價 | ||
VISHAY/威世 |
24+ |
SMAFL |
50000 |
只做原裝，歡迎詢價，量大價優(yōu) |
詢價 | ||
VISHAY/威世 |
22+ |
SMAFL |
20000 |
公司只有原裝 品質(zhì)保障 |
詢價 | ||
ON |
24+ |
SMAFL |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
ON |
23+ |
DO-214A |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 |
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