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          首頁 >MBR835>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MBR835

          8.0A SCHOTTKY BARRIER RECTIFIER

          Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

          文件:64.33 Kbytes 頁數(shù):2 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          MBR835

          SCHOTTKY BARRIER RECTIFIER

          VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

          文件:200.58 Kbytes 頁數(shù):2 Pages

          BILIN

          銀河微電

          MBR835

          Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

          FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app

          文件:80.6 Kbytes 頁數(shù):2 Pages

          SIRECTIFIER

          矽萊克電子

          MBR835

          Schottky Barrier Rectifiers

          VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ The pl

          文件:234.78 Kbytes 頁數(shù):2 Pages

          LUGUANG

          魯光電子

          MBR835

          8.0A SCHOTTKY BARRIER RECTIFIER

          Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

          文件:428.68 Kbytes 頁數(shù):2 Pages

          KERSEMI

          MBR835

          8.0A SCHOTTKY BARRIER RECTIFIER

          Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

          文件:428.69 Kbytes 頁數(shù):2 Pages

          KERSEMI

          MBR835

          8.0A SCHOTTKY BARRIER RECTIFIER

          Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

          文件:428.73 Kbytes 頁數(shù):2 Pages

          KERSEMI

          MBR835

          Axial Lead Rectifiers

          Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency invert

          文件:138.45 Kbytes 頁數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          MBR835

          High Tjm Low IRRM Schottky Barrier Diodes

          文件:112.18 Kbytes 頁數(shù):2 Pages

          SIRECTIFIER

          矽萊克電子

          MBR835

          肖特基二極管

          LGE

          魯光電子

          技術(shù)參數(shù)

          • IF(A):

            8.0

          • VRRM(V):

            35

          • IFSM(A):

            150

          • VF(V):

            0.70

          • @IF(A):

            8.0

          • IR(μA)TA=25℃:

            0.1

          • TJ(℃):

            /

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          onsemi(安森美)
          25+
          -
          8577
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          ONSEMI
          05+
          原廠原裝
          10081
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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          Diodes
          17+
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          6200
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          DIODES
          23+
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          10000
          專做原裝正品,假一罰百!
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          DIODES/美臺(tái)
          23+
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          89630
          當(dāng)天發(fā)貨全新原裝現(xiàn)貨
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          一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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          DIODES
          25+
          TO-TO-220
          12300
          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          詢價(jià)
          Diodes
          2410+
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          3866
          優(yōu)勢(shì)代理渠道 原裝現(xiàn)貨 可全系列訂貨
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          Rochester
          25+
          電聯(lián)咨詢
          7800
          公司現(xiàn)貨,提供拆樣技術(shù)支持
          詢價(jià)
          onsemi(安森美)
          25+
          -
          8577
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          更多MBR835供應(yīng)商 更新時(shí)間2026-1-20 16:36:00
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