Axial Lead Rectifier

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ONSEMI

安森美半導(dǎo)體

SCHOTTKY BARRIER RECTIFIERS

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CTC

沛?zhèn)?/p>

肖特基勢(shì)壘整流器，100 V，3.0 A

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier?s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, ? Low Reverse Current\n? Low Stored Charge, Majority Carrier Conduction\n? Low Power Loss/High Efficiency\n? Highly Stable Oxide Passivated Junction\n? Guard-Ring for Stress Protection\n? Low Forward Voltage\n? 175°C Operating Junction Temperature\n? High Surge CapacityMechanical Characteristics:\n?;

ONSEMI

安森美半導(dǎo)體

schottky-5a-and-above

The MBR3100 is a high voltage Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required.

Diodes

美臺(tái)半導(dǎo)體

Package：DO-201AA，DO-27，軸向；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 100V 3A DO201AD

ONSEMI

安森美半導(dǎo)體

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free wheel

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ONSEMI

安森美半導(dǎo)體

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V 0 ? Low power loss, high efficiency ? For use in low voltage high frequency inverters, free wheeling, and polarity protecti

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AITSEMI

創(chuàng)瑞科技

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free wheel

文件：166.64 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

High Surge Capability

DESCRIPTION The UTC MBR3100 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR3100 is suitable for free wheeling and p

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UTC

友順

High Surge Capability

DESCRIPTION The UTC MBR3100 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR3100 is suitable for free wheeling and p

文件：119.52 Kbytes 頁數(shù)：3 Pages

UTC

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