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          首頁 >MBR3045W>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MBR3045W

          30 Amp Schottky Barrier Rectifier 20 to 100 Volts

          Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0

          文件:110.73 Kbytes 頁數(shù):2 Pages

          MCC

          MBR3045W

          30 Amp Schottky Barrier Rectifier 20 to 100 Volts

          Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0

          文件:228.71 Kbytes 頁數(shù):2 Pages

          PFS

          平盛電子

          MBR3045WT

          SCHOTTKY RECTIFIER

          Features: ? 150 ℃ TJ operation ? Center tap TO-247AD package ? Low forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Th

          文件:386.77 Kbytes 頁數(shù):7 Pages

          SMC

          桑德斯微電子

          MBR3045WT

          30A SCHOTTKY RECTIFIER

          30A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

          文件:204.96 Kbytes 頁數(shù):2 Pages

          DIGITRON

          MBR3045WT

          30 Amp Schottky Barrier Rectifier 20 to 60 Volts

          Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0

          文件:1.19919 Mbytes 頁數(shù):2 Pages

          MCC

          MBR3045WT

          Schottky Barrier Rectifier

          FEATURES ? Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ? Low forward voltage ? Guarding for stress protection ? 150℃ operating junction temperature ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and re

          文件:249.59 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MBR3045WT

          SWITCHMODE Power Rectifier

          SWITCHMODE Power Rectifier These state?of?the?art devices use the Schottky Barrier principle with a platinum barrier metal. Features ? Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating ? Guardring for Stress Protection ? Low Forward Voltage ? 1

          文件:141.62 Kbytes 頁數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          MBR3045WT

          Schottky Rectifier, 2 x 15 A

          DESCRIPTION The MBR30..WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters

          文件:113.94 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          MBR3045WTG

          Switch Mode Power Rectifier

          SWITCHMODE Power Rectifier These state?of?the?art devices use the Schottky Barrier principle with a platinum barrier metal. Features ? Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating ? Guardring for Stress Protection ? Low Forward Voltage ? 1

          文件:66.85 Kbytes 頁數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          MBR3045WTG

          SWITCHMODE Power Rectifier

          SWITCHMODE Power Rectifier These state?of?the?art devices use the Schottky Barrier principle with a platinum barrier metal. Features ? Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating ? Guardring for Stress Protection ? Low Forward Voltage ? 1

          文件:141.62 Kbytes 頁數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Configuration:

            Common Cathode

          • VRRM Min (V):

            45

          • VF Max (V):

            0.76

          • IRM Max (μA):

            1000

          • IO(rec) Max (A):

            30

          • IFSM Max (A):

            200

          • Package Type:

            TO-247-3

          供應(yīng)商型號品牌批號封裝庫存備注價格
          24+
          3000
          公司現(xiàn)貨
          詢價
          ONSEMICONDUC
          05+
          原廠原裝
          4289
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          ON
          25+
          TO-220
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          ON
          24+/25+
          395
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          ON
          2015+
          TO-247
          12500
          全新原裝,現(xiàn)貨庫存長期供應(yīng)
          詢價
          MOT
          25+
          TO-247
          90
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          IR
          24+
          原廠封裝
          4000
          原裝現(xiàn)貨假一罰十
          詢價
          ON
          16+
          TO-3P
          10000
          全新原裝現(xiàn)貨
          詢價
          MOT
          23+
          TO247
          5000
          原裝正品,假一罰十
          詢價
          ON
          24+
          TO-247
          6000
          進(jìn)口原裝正品假一賠十,貨期7-10天
          詢價
          更多MBR3045W供應(yīng)商 更新時間2026-1-19 16:00:00
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