| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state?of?the?art devices use the Schottky Barrier principle with a platinum barrier metal. Features ? Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating ? Guardring for Stress Protection ? Low Forward Voltage ? 1 文件：141.62 Kbytes 頁數：4 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION The MBR30..WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters 文件：113.94 Kbytes 頁數：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Schottky Barrier Rectifier FEATURES ? Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ? Low forward voltage ? Guarding for stress protection ? 150℃ operating junction temperature ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and re 文件：249.59 Kbytes 頁數：2 Pages | ISC 無錫固電 | ISC | ||
Switch Mode Power Rectifier SWITCHMODE Power Rectifier These state?of?the?art devices use the Schottky Barrier principle with a platinum barrier metal. Features ? Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating ? Guardring for Stress Protection ? Low Forward Voltage ? 1 文件：66.85 Kbytes 頁數：4 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state?of?the?art devices use the Schottky Barrier principle with a platinum barrier metal. Features ? Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating ? Guardring for Stress Protection ? Low Forward Voltage ? 1 文件：141.62 Kbytes 頁數：4 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
SCHOTTKY RECTIFIER Features: ? 150 ℃ TJ operation ? Center tap TO-247AD package ? Low forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Th 文件：386.22 Kbytes 頁數：7 Pages | SMC 桑德斯微電子 | SMC | ||
MBR3045WTP SCHOTTKY RECTIFIER Features 150 ?C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb ? Free Device All SMC parts a 文件：299.89 Kbytes 頁數：4 Pages | SMCDIODE 桑德斯微電子 | SMCDIODE | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION The VS-MBR30..WT... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, conv 文件：117 Kbytes 頁數：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
30 AMPERES SCHOTTKY BARRIER RECTIFIERS 文件：134.25 Kbytes 頁數：4 Pages | PANJIT 強茂 | PANJIT | ||
30 AMPERES SCHOTTKY BARRIER RECTIFIERS 文件：134.25 Kbytes 頁數：4 Pages | PANJIT 強茂 | PANJIT |
技術參數
- VRRM Max.[V]：
45
- IF[A]：
30
- IFSM[A]：
250
- VF@IF Max.[V]：
0.7
- VF@IF Max.[A]：
30
- IR@VR Max.[μA]：
100
- IR@VR Max.[V]：
45
- Package：
TO-220AC
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
華晶 |
25+ |
TO220 |
6500 |
十七年專營原裝現貨一手貨源,樣品免費送 |
詢價 | ||
24+ |
3000 |
公司現貨 |
詢價 | ||||
MOT |
05+ |
原廠原裝 |
4233 |
只做全新原裝真實現貨供應 |
詢價 | ||
MOTOROLA |
25+ |
管3P |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
DIODES |
25+ |
TO-220 |
6000 |
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可 |
詢價 | ||
海矽美MHCHXM |
24+ |
TO-220 |
5000 |
全現原裝公司現貨 |
詢價 | ||
LT |
22+ |
TO-3P |
14000 |
進口原裝 |
詢價 | ||
ON |
25+ |
TO-3P |
2987 |
絕對全新原裝現貨供應! |
詢價 | ||
華晶 |
23+ |
TO220 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
DOINGTER/杜因特 |
23+ |
TO-220220F |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 |
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