SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheelin

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JIANGSU

長(zhǎng)電科技

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

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SIRECTIFIER

矽萊克電子

20A Dual Schottky Rectifiers

PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES ? Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 ? Dual rectifier construction, positive center tap ? Metal-silicon junction, majority carrier conduction ? Low power loss, high efficiency

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SSC

Silicon Standard Corp.

20.0AMP. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

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LUGUANG

魯光電子

SCHOTTKY RECTIFIER

Features: ? 150 °C TJ operation ? Center tap configuration ? Low forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

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SMC

桑德斯微電子

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-

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KERSEMI

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features ? Meatl of Silicon Rectifier, Majority Conducton ? Guard ring for transient protection ? Low Forward Voltage Drop ? High Current Capability, High Efficiency ? Low Power Loss

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KERSEMI

Guardring for overvoltage protection

FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-

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KERSEMI

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

SWITCHMODE? Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: ? 20 Amps Total (10 Amps Per Diode Leg) ? Guard–Ring for Stress Protection ? Low Forward Voltage ? 150°C Operating Junction Temper

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KERSEMI

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

SWITCHMODE? Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: ? 20 Amps Total (10 Amps Per Diode Leg) ? Guard–Ring for Stress Protection ? Low Forward Voltage ? 150°C Operating Junction Temper

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KERSEMI