1.0A 60v Schottky diode

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SUNMATE

森美特

PDF上傳者：深圳冠榮電子有限公司

Schottky Rectifier, 1 A

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VISHAYVishay Siliconix

威世威世科技公司

肖特基勢壘整流器，60 V，1.0 A

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier?s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, ? Low Reverse Current\n? Low Stored Charge, Majority Carrier Conduction\n? Low Power Loss/High Efficiency\n? Highly Stable Oxide Passivated JunctionMechanical Characteristics:\n? Case: Epoxy, Molded\n? Weight: 0.4 gram (approximately)\n? Finish: All External Surfaces Corrosion Resistant and Terminal;

ONSEMI

安森美半導(dǎo)體

Package：DO-204AL，DO-41，軸向；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 60V 1A AXIAL

ONSEMI

安森美半導(dǎo)體

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A

DESCRIPTION The MBR120E~MBR1200E is available in SOD-323HE Package FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V 0 ? Low power loss, high efficiency ? For use in low voltage high frequency inverters, free wheeling, and polarity protection appl

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AITSEMI

創(chuàng)瑞科技

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 1.0A

DESCRIPTION Th e MBR120 F MBR1200 F are available in S OD 1 23 FL p a ckage FEATURES ? M e tal silicon junction, majority carrier conduction ? For surface mounted applications ? Low power loss, high efficien cy ? High forward surge current capability ? For use in low volta ge, high fre

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AITSEMI

創(chuàng)瑞科技

Schottky Diodes

■ Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

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KEXIN

科信電子

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES Schottky barrier chip guard ring die construction for transient protection Low forward loss,high efficiency High surge capability High current capability and low forward voltage drop For use in low voltage,high frequency inverters,free wheeling,and polarity protection application P

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PACELEADER

霈峰

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free

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ONSEMI

安森美半導(dǎo)體

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

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UTC

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