| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MBR16 | Low forward voltage drop 文件:90.64 Kbytes 頁數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Schottky Rectifier, 1 A DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES ? Low profile, axial lea 文件:84.6 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol 文件:120.58 Kbytes 頁數(shù):3 Pages | UTC 友順 | UTC | ||
Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free 文件:67.47 Kbytes 頁數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert 文件:95.5 Kbytes 頁數(shù):4 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
1.0A Axial Leaded Schottky Barrier Rectifier Diodes Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 文件:109.14 Kbytes 頁數(shù):2 Pages | SUNMATE 森美特 | SUNMATE | ||
Low Reverse Current Features ? Low Reverse Current ? Low Stored Charge. Majority Carrier Conduction ? Low Power Loss/High Efficiency ? Highly Stable Oxide Passivated Junction 文件:144.06 Kbytes 頁數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. ? Exceeds environmental standards of MIL-S-19500/228 ? For use in low voltage,high frequenc 文件:60.62 Kbytes 頁數(shù):2 Pages | PANJIT 強茂 | PANJIT | ||
SCHOTTKY BARRIER RECTIFIER DIODES FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free 文件:36.79 Kbytes 頁數(shù):2 Pages | SYNSEMI | SYNSEMI | ||
1A SCHOTTKY RECTIFIER 1A SCHOTTKY RECTIFIER 文件:203.21 Kbytes 頁數(shù):3 Pages | DIGITRON | DIGITRON |
技術(shù)參數(shù)
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Configuration:
Single
- VRRM Min (V):
60
- VF Max (V):
0.75
- IRM Max (μA):
500
- IO(rec) Max (A):
1
- IFSM Max (A):
25
- Package Type:
Axial Lead-2
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
QFN |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
LT |
23+ |
TO-220 |
5000 |
絕對全新原裝!現(xiàn)貨!特價!請放心訂購! |
詢價 | ||
DISCRETE |
50 |
ON |
10300 |
詢價 | |||
ON |
24+/25+ |
59 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
24+ |
20000 |
詢價 | |||||
FAIRCHIL |
2015+ |
TO-220AC |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
ON |
13+ |
DO-41 |
5000 |
原裝現(xiàn)貨價格有優(yōu)勢量大發(fā)貨 |
詢價 | ||
仙童 |
06+ |
TO-220 |
8000 |
原裝庫存 |
詢價 | ||
gs |
24+ |
550 |
8 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ONSEMICONDUCTOR |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 |
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