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    首頁(yè)
                >MBR1535>規(guī)格書(shū)列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    MBR1535_V01
    SCHOTTKY BARRIER RECTIFIER
    
FEATURES
Metal-semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94
    文件：1.42015 Mbytes 頁(yè)數(shù)：2 Pages
    SAMYANG
    三陽(yáng)電子
    

    MBR1535CT
    15 Amp Schottky Barrier Rectifier 20 to 100 Volts
    
Features
·  Meatl of Silicon Rectifier, Majority Conducton
·  Guard ring for transient protection
·  Low Forward Voltage Drop
·  High Current Capability, High Efficiency
·  Low Power Loss
    文件：477.94 Kbytes 頁(yè)數(shù)：2 Pages
    KERSEMI
    

    MBR1535CT
    Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
    
Features
● Schottky barrier chip
● Guard ring die constuction for transient protection
● Low power loss, high efficiency
● High current capability and low forward voltage drop
● High surge capability
● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a
    文件：141.07 Kbytes 頁(yè)數(shù)：2 Pages
    KERSEMI
    

    MBR1535CT
    Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
    
Features
● Schottky barrier chip
● Guard ring die constuction for transient protection
● Low power loss, high efficiency
● High current capability and low forward voltage drop
● High surge capability
● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a
    文件：140.94 Kbytes 頁(yè)數(shù)：2 Pages
    KERSEMI
    

    MBR1535CT
    Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
    
Features
● Schottky barrier chip
● Guard ring die constuction for transient protection
● Low power loss, high efficiency
● High current capability and low forward voltage drop
● High surge capability
● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a
    文件：152.34 Kbytes 頁(yè)數(shù)：2 Pages
    KERSEMI
    

    MBR1535CT
    Guard ring die constuction for transient protection
    
Features
● Schottky barrier chip
● Guard ring die constuction for transient protection
● Low power loss, high efficiency
● High current capability and low forward voltage drop
● High surge capability
● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a
    文件：1.51204 Mbytes 頁(yè)數(shù)：4 Pages
    KERSEMI
    

    MBR1535CT
    Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
    
Features
● Schottky barrier chip
● Guard ring die constuction for transient protection
● Low power loss, high efficiency
● High current capability and low forward voltage drop
● High surge capability
● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a
    文件：140.9 Kbytes 頁(yè)數(shù)：2 Pages
    KERSEMI
    

    MBR1535CT
    MBR1535CT/MBRB1535CT/MBR1535CT-1 SCHOTTKY RECTIFIER
    
Features
150 ?C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Terminals finish:
    文件：516.87 Kbytes 頁(yè)數(shù)：6 Pages
    SMCDIODE
    桑德斯微電子
    

    MBR1535CT
    SCHOTTKY BARRIER RECTIFIER
    
FEATURES
Metal-semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94
    文件：1.4729 Mbytes 頁(yè)數(shù)：2 Pages
    SAMYANG
    三陽(yáng)電子
    

    MBR1535CT
    SCHOTTKY BARRIER RECTIFIER
    
FEATURES
Metal-semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94
    文件：1.43861 Mbytes 頁(yè)數(shù)：2 Pages
    SAMYANG
    三陽(yáng)電子
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • VRM (V)：
      ?35
    • IFSM (A)：
      ?150
    • IF (A)：
      ?15
    • VF (V)：
      ?0.63
    • IFM (A)：
      ?15
    • TRR (μs)：
      ?
    • IR (μA)：
      ?200
    • @VR (V)：
      ?35
    • Package Qty：
      ?Tube
    • FIT：
      ?48; Tj=100℃
    
            
    
        
    
            
    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    
                
    



    		

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    ON
    		

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    MOTOROLA/摩托羅拉
    		

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    MOTOROLA/摩托羅拉
    		

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    更多MBR1535供應(yīng)商
            更新時(shí)間2026-1-21 16:01:00
        
    
        
    
          
    
            
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