絲?。?strong>MBR1060CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

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RFE

RFE international

絲?。?strong>MBR1060CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

10 Am p Schott ky Barrier Rectifier 30-60 Volts

Features ? Metal of Silicon Rectifier, Majority Carrier Conduction ? Halogen Free Available Upon Request By Adding Suffix -HF ? Low Power Loss High Efficiency ? High Surge Capacity, High Current Capability ? Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Order

文件：647.92 Kbytes 頁數(shù)：2 Pages

MCC

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：197.32 Kbytes 頁數(shù)：2 Pages

MOSPEC

統(tǒng)懋

Switchmode Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：131.71 Kbytes 頁數(shù)：2 Pages

MOSPEC

統(tǒng)懋

10A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

文件：64.989 Kbytes 頁數(shù)：2 Pages

DIODES

美臺(tái)半導(dǎo)體

Product Specification

Features& Mechanical Characteristics Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction， positive center tap ● Metal of silicon rectifier， majority carrier conduction ● Low forward voltage， high efficiency ● Guarding for

文件：533.29 Kbytes 頁數(shù)：7 Pages

GOOD-ARK

固锝電子

Dual rectifier construction, positive center tap

Features& Mechanical Characteristics Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction， positive center tap ● Metal of silicon rectifier， majority carrier conduction ● Low forward voltage， high efficiency ● Guarding for

文件：2.32993 Mbytes 頁數(shù)：6 Pages

SURGE

10.0 AMPS. Schottky Barrier Rectifiers

Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur

文件：99.53 Kbytes 頁數(shù)：2 Pages

TSC

臺(tái)灣半導(dǎo)體

DUAL SCHOTTKY RECTIFIERS

VOLTAGE RANGE: 20 - 60 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guar

文件：145.1 Kbytes 頁數(shù)：2 Pages

BILIN

銀河微電