Schottky Barrier Rectifier

FEATURES ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

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ISC

無錫固電

High-Voltage Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum

文件：524.97 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

Features ? Low Power Loss ? High Efficiency ? Low Forward Voltage, High Current Capability ? Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 ? Marking : type number

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KERSEMI

High-Voltage Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum

文件：524.97 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-220-2；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division