| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MBR1010 | SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition 文件：92.39 Kbytes 頁數(shù)：2 Pages | GOOD-ARK 固锝電子 | GOOD-ARK | |
MBR1010 | SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition 文件：35.03 Kbytes 頁數(shù)：2 Pages | HY 虹揚(yáng)科技 | HY | |
MBR1010 | SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition 文件：39.46 Kbytes 頁數(shù)：2 Pages | HY 虹揚(yáng)科技 | HY | |
MBR1010 | Silicon Bridge Rectifiers 文件：402.55 Kbytes 頁數(shù)：3 Pages | HY 虹揚(yáng)科技 | HY | |
MBR1010 | 橋式整流器 MBR/IF:10A/ Vol:1000V/ VF@IF:5A=>1.1V/ Tj:-55~150℃/ | HY 虹揚(yáng)科技 | HY | |
MBR10100 SCHOTTKY RECTIFIER Features 150 ?C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish: 100% Pure Tin This is 文件：446.94 Kbytes 頁數(shù)：4 Pages | SMCDIODE 桑德斯微電子 | SMCDIODE | ||
SCHOTTKY BARRIER RECTIFIER FEATURE ? Schottky Barrier Chip ? Guard Ring Die Construction for Transient Protection ? Low Power Loss, High Efficiency ? High Surge Capability ? High Current Capability and Low Forward Voltage Drop ? For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A 文件：103.27 Kbytes 頁數(shù)：1 Pages | TEL | TEL | ||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state?of?the?art devices have the following features: Features ? Guard?Ring for Stress Protection ? Low Forward Voltage ? 175°C Operating Junction Temperature ? Epoxy Meets UL 9 文件：1.21653 Mbytes 頁數(shù)：3 Pages | KERSEMI | KERSEMI | ||
Trench MOS Schottky technology Features ? Low Power Loss ? High Efficiency ? Low Forward Voltage, High Current Capability ? Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 ? Marking : type number 文件：1.96709 Mbytes 頁數(shù)：4 Pages | KERSEMI | KERSEMI | ||
Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state?of?the?art devices have the following features: Features ? Guard?Ring for Stress Protection ? Low Forward Voltage ? 175°C Operating Junction Temperature ? Epoxy Meets UL 9 文件：498.6 Kbytes 頁數(shù)：2 Pages | KERSEMI | KERSEMI |
技術(shù)參數(shù)
- VRRM(V)：
1000
- IO(A)：
10
- IFSM(A)：
240
- VF(V)：
1.10
- IR(uA)：
10
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HYGROUP臺產(chǎn) |
24+ |
MBR-W |
50000 |
詢價(jià) | |||
ON |
05+ |
原廠原裝 |
4246 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
DISCRETE |
50 |
ON |
11628 |
詢價(jià) | |||
ON |
2015+ |
TO-2202 |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價(jià) | ||
ON |
25+ |
TO-220 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
MOT |
23+ |
TO-220 |
5500 |
現(xiàn)貨,全新原裝 |
詢價(jià) | ||
AAT |
24+ |
TO-220 |
50000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ON |
23+ |
TO220AC |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
LT |
16+ |
TO-220 |
8000 |
原裝現(xiàn)貨請來電咨詢 |
詢價(jià) | ||
ON |
25+ |
TO220-2 |
470 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) |
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