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    首頁 >MBR10>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    MBR10100G-T27-T

    SCHOTTKY BARRIER RECTIFIER

    ■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

    文件:132.95 Kbytes 頁數(shù):3 Pages

    UTC

    友順

    MBR10100G-TF1-T

    SCHOTTKY BARRIER RECTIFIER

    ■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

    文件:132.95 Kbytes 頁數(shù):3 Pages

    UTC

    友順

    MBR10100L-T27-T

    SCHOTTKY BARRIER RECTIFIER

    ■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

    文件:132.95 Kbytes 頁數(shù):3 Pages

    UTC

    友順

    MBR10100L-TF1-T

    SCHOTTKY BARRIER RECTIFIER

    ■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

    文件:132.95 Kbytes 頁數(shù):3 Pages

    UTC

    友順

    MBR10100-M3

    High-Voltage Trench MOS Barrier Schottky Rectifier

    FEATURES ? Trench MOS Schottky technology ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

    文件:94.22 Kbytes 頁數(shù):4 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    MBR10100-M3

    High Voltage Trench MOS Barrier Schottky Rectifier

    FEATURES ? Trench MOS Schottky technology ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vish

    文件:110.87 Kbytes 頁數(shù):4 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    MBR10100MFS

    SWITCHMODE Power Rectifiers

    Features ? Low Power Loss / High Efficiency ? New Package Provides Capability of Inspection and Probe After Board Mounting ? Guardring for Stress Protection ? Low Forward Voltage Drop ? 175?C Operating Junction Temperature ? Wettable Flacks Option Available ? NRVB Prefix for Automotive and

    文件:189.66 Kbytes 頁數(shù):5 Pages

    ONSEMI

    安森美半導(dǎo)體

    MBR10100MFS_V01

    SWITCHMODE Power Rectifiers

    Features ? Low Power Loss / High Efficiency ? New Package Provides Capability of Inspection and Probe After Board Mounting ? Guardring for Stress Protection ? Low Forward Voltage Drop ? 175?C Operating Junction Temperature ? Wettable Flacks Option Available ? NRVB Prefix for Automotive and

    文件:189.66 Kbytes 頁數(shù):5 Pages

    ONSEMI

    安森美半導(dǎo)體

    MBR10100MFST1G

    SWITCHMODE Power Rectifiers

    Features ? Low Power Loss / High Efficiency ? New Package Provides Capability of Inspection and Probe After Board Mounting ? Guardring for Stress Protection ? Low Forward Voltage Drop ? 175?C Operating Junction Temperature ? Wettable Flacks Option Available ? NRVB Prefix for Automotive and

    文件:189.66 Kbytes 頁數(shù):5 Pages

    ONSEMI

    安森美半導(dǎo)體

    MBR10100MFST3G

    SWITCHMODE Power Rectifiers

    Features ? Low Power Loss / High Efficiency ? New Package Provides Capability of Inspection and Probe After Board Mounting ? Guardring for Stress Protection ? Low Forward Voltage Drop ? 175?C Operating Junction Temperature ? Wettable Flacks Option Available ? NRVB Prefix for Automotive and

    文件:189.66 Kbytes 頁數(shù):5 Pages

    ONSEMI

    安森美半導(dǎo)體

    技術(shù)參數(shù)

    • VRRM(V):

      50

    • IO(A):

      10

    • IFSM(A):

      240

    • VF(V):

      1.10

    • IR(uA):

      10

    供應(yīng)商型號品牌批號封裝庫存備注價格
    24+
    20000
    詢價
    BCD
    TO-252
    2000
    原裝長期供貨!
    詢價
    海矽美
    23+
    to-220f
    2000
    全新原裝正品現(xiàn)貨
    詢價
    MOT
    24+
    TO220
    5000
    原裝進口現(xiàn)貨假一賠十
    詢價
    ON
    1215+
    TO-92
    150000
    全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
    詢價
    PANJIT
    18+
    TO-263
    41200
    原裝正品,現(xiàn)貨特價
    詢價
    ON/安森美
    21+
    TO-220AC(TO-220-2)
    8080
    只做原裝,質(zhì)量保證
    詢價
    ON/安森美
    23+
    TO-220
    8160
    原廠原裝
    詢價
    STSC
    22+
    TO220-3
    3000
    原裝正品,支持實單
    詢價
    LT
    16+
    TO-220
    8000
    原裝現(xiàn)貨請來電咨詢
    詢價
    更多MBR10供應(yīng)商 更新時間2026-1-22 16:01:00

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