32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.3 V ? High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) ? Operating Temperature –25 to +85°C ? Package 73-ball BGA 1.FLASH MEMORY ? Simultaneous Read/Write operations (dual bank) Miltiple devi

文件：1.58981 Mbytes 頁數(shù)：61 Pages

FUJITSU

富士通

32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 V to 3.3 V ? High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) ? Operating Temperature –25°C to +85°C ? Package 71-ball BGA 1.FLASH MEMORY ? Simultaneous Read/Write operations (dual bank) Multiple

文件：1.38335 Mbytes 頁數(shù)：63 Pages

FUJITSU

富士通

32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 V to 3.3 V ? High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) ? Operating Temperature –25°C to +85°C ? Package 71-ball BGA 1.FLASH MEMORY ? Simultaneous Read/Write operations (dual bank) Multiple

文件：1.38335 Mbytes 頁數(shù)：63 Pages

FUJITSU

富士通

32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 V to 3.3 V ? High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) ? Operating Temperature –25°C to +85°C ? Package 71-ball BGA 1.FLASH MEMORY ? Simultaneous Read/Write operations (dual bank) Multiple

文件：1.38335 Mbytes 頁數(shù)：63 Pages

FUJITSU

富士通

絲?。?a target="_blank" title="Marking" href="/mb8f/marking.html">MB8F；Package：MBF；VOLTAGE RANGE - 100 to 1000 V CURRENT - 0.8 A

FEATURES Glass Passivated Chip Junction Reverse Voltage - 100 to 1000 V Forward Current - 0.8 A High Surge Current Capability Designed for Surface Mount Application

文件：462.26 Kbytes 頁數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

絲?。?a target="_blank" title="Marking" href="/mb8s/marking.html">MB8S；0.8Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts

Features · Surface Mount Package · Glass Passivated Diode Construction · Moisture Resistant Epoxy Case · High Surge Current Capability

文件：1.07988 Mbytes 頁數(shù)：2 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/mb8s/marking.html">MB8S；Package：SOIC4-W；Bridge Rectifiers, 0.5 A

Description The MB family of bridge rectifiers is a 0.5 A rectifier family that achieves high surge current absorption within a very small foot print. Within its small 35 mm2 form factor, the MB family shines in its surge capability. In order to absorb high surge currents, the design supports

文件：273.74 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/mb8s/marking.html">MB8S；Package：MBS；Bridge Rectifiers, Surface Mount

Features UL recognition file #E313149 Ideal for automated placement | High surge current capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.4791 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

絲印：MB8SA；Package：MBS；Bridge Rectifiers, Surface Mount

Features UL recognition file #￡313149 Ideal for automated placement High surge current capabilty Wests MSL level 1, per -STD-020, LF maximum peakof260°C

文件：955.16 Kbytes 頁數(shù)：3 Pages

RFE

RFE international

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes 頁數(shù)：6 Pages

MURATA

村田