超低電壓電平轉(zhuǎn)換器

MAX13000E–MAX13005E是6通道電平轉(zhuǎn)換器，能夠?yàn)槎嚯妷合到y(tǒng)的數(shù)據(jù)傳輸提供電平轉(zhuǎn)換功能。外接電源電壓VCC和VL分別設(shè)置器件兩側(cè)的邏輯電平。器件VL一側(cè)的邏輯信號(hào)在器件的VCC一側(cè)轉(zhuǎn)換為高壓邏輯信號(hào)，反之亦然。\n MAX13000E–MAX13005E具有小于4μA的VCC和VL靜態(tài)電源電流。MAX13000E–MAX13005E還為VCC側(cè)的I/O提供±15kV ESD保護(hù)，可在具有外部信號(hào)走線的應(yīng)用中提供更強(qiáng)大的保護(hù)。ESD保護(hù)采用人體模型(HBM)。MAX13000E/MAX13001E/MAX13002E能夠確保實(shí)現(xiàn)230kbps的數(shù)據(jù)速率。MAX13003E/MAX1 \n? 可保證的數(shù)據(jù)速率選項(xiàng) 230kbps (MAX13000E/MAX13001E/MAX13002E) 20Mbps (MAX13003E/MAX13004E/MAX13005E) \n? 雙向電平轉(zhuǎn)換，無DIRECTION輸入控制 \n? VL電壓可低至+0.9V，VCC電壓可低至+1.5V \n? VCC側(cè)I/O線具有±15kV ESD保護(hù)(HBM) \n? 低靜態(tài)電流：<4μA \n? 使能/關(guān)斷控制 \n? 2mm x 2mm、16焊球UCSP封裝以及引腳封裝 \n? 可連接CMOS或開漏極輸出;

ADI

亞德諾

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency e

文件：111.23 Kbytes 頁(yè)數(shù)：6 Pages

MOTOROLA

摩托羅拉

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency ele

文件：138.69 Kbytes 頁(yè)數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency e

文件：111.23 Kbytes 頁(yè)數(shù)：6 Pages

MOTOROLA

摩托羅拉