Thin Film Attenuator Pads

MACOM attenuator chips are fabricated using our state of the art thin film metallization and advanced photolithography technology. All devices are available in chip form with a metalized ground connection on the back. This ground is wrapped around on the four corners of the chip so additional ground ·RoHS\n·Return Loss > 16 dB 13 to 40 GHz\n·Return Loss > 18 dB DC to 12 GHz\n·Flat Response From DC to 40 GHz\n·Medium Power Handling 2W CW\n·DC to 40 GHz\n·Very Good Stability Over Temperature (TCR < 100 PPM)\n·Space Saving Footprint .030” X .030” (762 X .762mm)\n·Ground Wrap to Top (No ground bond;

MACOM

Attenuator DIE

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MA-COM

Package：模具；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類(lèi)別：RF/IF，射頻/中頻和 RFID 衰減器 描述：RF ATTENUATOR 10DB DIE

MACOM Technology Solutions

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: ? Guard–Ring for Stress Protection ? Low Forward Voltage ? 150°C Operating Junction Temperature ? Guara

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MOTOROLA

摩托羅拉

High Voltage Schottky Rectifiers

FEATURES ? Trench MOS Schottky technology ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum

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VISHAYVishay Siliconix

威世威世科技公司

10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

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TSC

臺(tái)灣半導(dǎo)體