SURMOUNT Low Barrier Tee ??301??Footprint Silicon Schottky Diodes

Description and Applications The MA4E2513L-1289 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

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SURMOUNT Low Barrier Tee ??301??Footprint Silicon Schottky Diodes

Description and Applications The MA4E2513L-1289 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

文件：90.94 Kbytes 頁數(shù)：3 Pages

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SURMOUNT Low Barrier Tee ??301??Footprint Silicon Schottky Diodes

Description and Applications The MA4E2513L-1289 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

文件：90.94 Kbytes 頁數(shù)：3 Pages

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SURMOUNT Low Barrier Tee ??301??Footprint Silicon Schottky Diodes

Description and Applications The MA4E2513L-1289 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

文件：90.94 Kbytes 頁數(shù)：3 Pages

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SURMOUNT Low Barrier Tee ??301??Footprint Silicon Schottky Diodes

Description and Applications The MA4E2513L-1289 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

文件：90.94 Kbytes 頁數(shù)：3 Pages

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SURMOUNTTM Low Barrier Tee ??301??Footprint Silicon Schottky Diodes

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SURMOUNTTM Low Barrier Tee ??301??Footprint Silicon Schottky Diodes

文件：105.21 Kbytes 頁數(shù)：3 Pages

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Low Barrier Series Tee Si

The MA4E2513L-1289 SURMOUNTTM Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC?) process. HMIC? circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which acts as the low di ·Extremely Low Parasitic Capitance and Inductance ?? ? ?\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC? Construction with Polyimide Scratch Protection\n·Extremely Small “0301” (1000 x 30;

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